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Toshiba Electronic Components Datasheet

TLP2631 Datasheet

GaAlAs IRed & Photo IC

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TLP2631 pdf
TOSHIBA photocoupler GaAAs IRed & Photo IC
TLP2631
Isolated Line Receiver
Simplex / Multiplex Data Transmission
Computer-Peripheral Interface
Microprocessor System Iinterface
Digital Isolation For A / D, D / A Conversion
TLP2631
Unit in mm
The TOSHIBA TLP2631 dual photocoupler consists of a pair of GaAAs
light emitting diode and integrated high gain, high speed photodetector.
This unit is 8-lead DIP.
The output of the detector circuit is an open collector, Schottky clamped
transistor.
A Faraday shield integrated on the photodetector chip reduces the effects
of capacitive coupling between the input LED emitter and the high gain
stages of the detector. This provides an effective common mode transient
immunity of 1000V / µs.
· Input current threshold: IF = 5mA(max.)
· Switching speed: 10MBd(typ.)
· Common mode transient immunity: ±1000V / µs(min.)
· Guaranteed performance over temperature: 0~70°C
· Isolation voltage: 2500Vrms(min.)
· UL recognized: UL1577, file no. E67349
TOSHIBA
Weight: 0.54g
1110C4
Truth Table(positive logic)
Input
H
L
Output
L
H
A 0.01 to 0.1mF bypass capacitor must
connected between pins 8 and 5(see Note 1).
Pin Configuration (top view)
1 VCC 8 1 : Anode 1
2 : Cathode 1
2 7 3 : Cathode 2
4 : Anode 2
3 6 5 : GND
4
GND
Shield
6 : VO2 (Output 2)
5 7 : VO1 (Output 1)
8 : VCC
Schematic
1 IF1
+
VF1 2
-
+ 4 IF2
VF2
3
-
Shield
ICC
IO1
8 VCC
7 VO1
IO2 6 VO2
5 GND
1 2002-09-25


Toshiba Electronic Components Datasheet

TLP2631 Datasheet

GaAlAs IRed & Photo IC

No Preview Available !

TLP2631 pdf
TLP2631
Maximum Ratings (no derating required up to 70°C)
Characteristic
Forward current (each channel)
Pulse forward current
(each channel)*
Reverse voltage (each channel)
Output current (each channel)
Output voltage (each channel)
Supply voltage
(1 minute maximum)
Output collector power
dissipation (each channel)
Operating temperature range
Storage temperature range
Lead soldering temperature
(10s)**
Isolation voltage
(AC, 1 min., R.H.60%, Note 3)
Symbol
IF
IFP
VR
IO
VO
VCC
PO
Tstg
Topr
Tsol
BVS
Rating
20
30
5
16
-0.5~7
7
40
-55~125
-40~85
260
2500
* t 1 msec duration.
** 2mm below seating plane.
Unit
mA
mA
V
mA
V
V
mW
°C
°C
°C
Vrms
Recommended Operating Conditions
Characteristic
Input current, low level, each channel
Input current, high level, each channel
Supply voltage, output
Fan out (TTL load, each channel)
Operating temperature
Symbol Min.
Typ.
Max.
IFL 0 250
IFH 6.3*
20
VCC
4.5
5
5.5
N ―― 8
Topr
0
70
*6.3mA is a guard banded value which allows for at least 20% CTR degradation.
Initial input current threshold value is 5.0mA or less.
Unit
µA
mA
V
°C
2 2002-09-25


Part Number TLP2631
Description GaAlAs IRed & Photo IC
Maker Toshiba Semiconductor
Total Page 8 Pages
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