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Toshiba Electronic Components Datasheet

TLP421F Datasheet

TOSHIBA Photocoupler GaAs IRed & Photo Transistor

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TLP421F pdf
TOSHIBA Photocoupler GaAs IRed & PhotoTransistor
TLP421F
TLP421F
Office Equipment
Household Appliances
Solid State Relays
Switching Power Supplies
Various Controllers
Signal Transmission Between Different Voltage Circuits
Unit in mm
The TOSHIBA TLP421F consists of a silicone phototransistor optically
coupled to a gallium arsenide infrared emitting diode in a four lead
plastic DIP (DIP4) with having high isolation voltage
(AC: 5kVRMS (min)).
Maximum rating and electrical characteristics are the same as TLP421
technical datasheet.
· Collectoremitter voltage: 80V (min)
· Current transfer ratio: 50% (min)
Rank GB: 100% (min)
· Isolation voltage: 5000 Vrms (min)
· UL recognized: UL1577
· BSI approved: BS EN60065: 1994
Approved no. 8411
BS EN60950: 1992
Approved no. 8412
· SEMKO approved: EN60065, EN60950, EN60335
Approved no. 9910249 / 01
TOSHIBA
115B202
Weight: 0.26 g
Pin Configurations
(top view)
14
23
1 : ANODE
2 : CATHODE
3 : EMITTER
4 : COLLECTOR
1 2002-09-25


Toshiba Electronic Components Datasheet

TLP421F Datasheet

TOSHIBA Photocoupler GaAs IRed & Photo Transistor

No Preview Available !

TLP421F pdf
· Option (D4) type
TUV approved: DIN VDE0884
Approved no. R9950202
Maximum operating insulation voltage: 1130VPK
Maximum permissible over voltage: 8000VPK
(Note): When a VDE0884 approved type is needed,
please designate the “ Option (D4) ”
Making VDE application: DIN VDE0884
· Construction mehanical rating
10.16mm pich
TLP421F type
Creepage distance
Clearance
Insulation thickness
8.0 mm (min)
8.0 mm (min)
0.4 mm (min)
TLP421F
2 2002-09-25


Part Number TLP421F
Description TOSHIBA Photocoupler GaAs IRed & Photo Transistor
Maker Toshiba Semiconductor
Total Page 3 Pages
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