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Toshiba Electronic Components Datasheet

TLP591B Datasheet

Photocoupler GaALAs Ired & Photo Diode Array

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TLP591B pdf
TOSHIBA Photocoupler GaAAs Ired & PhotoDiode Array
TLP591B
Telecommunications
Programmable Controllers
MOS Gate Drivers
MOSFET Gate Drivers
The TOSHIBA TLP591B consists of an aluminum gallium arsenide
infrared emitting diode optically coupled to a series-connected
photodiode array in a six-lead plastic DIP package.
The TLP591B is suitable for MOS FET gate drivers.
The TLP591B has an internal shunt resistor to optimize switching speed.
UL recognized: UL1577, file no. E67349
TLP591B
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
TOSHIBA
117A9
Weight: 0.39 g (typ.)
Forward current
IF 50 mA
Forward current derating
(Ta 25°C)
IF /°C
0.5 mA /°C
Pin Configuration (top view)
Pulse forward current
(100 μs pulse, 100 pps)
Reverse voltage
Junction temperature
IFP 1 A
VR 3 V
Tj 125 °C
16
2
Forward current
Reverse voltage
Junction temperature
Storage temperature range
Operating temperature range
Lead soldering temperature (10 sec.)
IFD
VRD
Tj
Tstg
Topr
Tsol
50
10
125
55 to 125
40 to 85
260
μA
V
°C
°C
°C
°C
34
1. : Anode(LED)
2. : Cathode(LED)
3. : NC
4. : Cathode
6. : Anode
Isolation voltage
(AC, 1 minute, R.H. 60%) (Note 1)
BVS
2500
Vrms
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1) Device considered a two terminal device: Pins 1, 2 and 3 shorted
together, and pins 4 and 6 shorted together.
Start of commercial production
1990/11
1 2014-09-01


Toshiba Electronic Components Datasheet

TLP591B Datasheet

Photocoupler GaALAs Ired & Photo Diode Array

No Preview Available !

TLP591B pdf
Recommended Operating Conditions
TLP591B
Characteristic
Symbol
Min Typ. Max Unit
Forward current
Operating temperature
IF 20 25 mA
Topr 25 85 °C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device.
Additionally, each item is an independent guideline respectively. In developing designs using this product, please
confirm specified characteristics shown in this document.
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Capacitance
Forward voltage
Reverse current
Symbol
VF
IR
CT
VFD
IRD
Test Condition
IF = 10 mA
VR = 3 V
V = 0V, f = 1 MHz
IFD = 10 μA
VRD = 10 V
Min Typ. Max Unit
1.2 1.4 1.7
V
— — 10 μA
— 30 60 pF
—7—V
— 7 — μA
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Open voltage
Short Current
Symbol
VOC
ISC
Test Condition
IF = 20 mA
IF = 20 mA
Isolation Characteristics (Ta = 25°C)
Characteristic
Capacitance (input to output)
Isolation resistance
Isolation voltage
Symbol
CS
RS
BVS
Test Condition
VS = 0V, f = 1 MHz
VS = 500 V, R.H. 60%
AC, 1 minute
AC, 1 second, in oil
DC, 1 minute, in oil
Min Typ. Max Unit
7 8—V
24 40 — μA
Min Typ. Max Unit
5×1010
0.8
1014
pF
Ω
2500 —
Vrms
— 5000 —
— 5000 —
Vdc
Switching Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min Typ. Max Unit
Turnon time
Turnoff time
tON IF = 20 mA, CL = 1000 pF
— 0.2 — ms
tOFF
(Note 2) — 3 — ms
(Note 2
Switching time test circuit
IF
VOUT
IF
CL
VOUT
5V
1V
0V
tON tOFF
2 2014-09-01


Part Number TLP591B
Description Photocoupler GaALAs Ired & Photo Diode Array
Maker Toshiba Semiconductor
Total Page 4 Pages
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