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Toshiba Electronic Components Datasheet

TLP781F Datasheet

GaAs IRED & Photo-Transistor

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TLP781F pdf
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TLP781/TLP781F
TOSHIBA Photocoupler GaAs IRED & PhotoTransistor
TLP781, TLP781F
Office Equipment
Household Appliances
Solid State Relays
Switching Power Supplies
Various Controllers
Signal Transmission Between Different Voltage
Circuits
TLP781
Unit in mm
The TOSHIBA TLP781 consists of a silicone phototransistor
optically coupled to a gallium arsenide infrared emitting diode in a
four lead plastic DIP (DIP4) with having high isolation voltage
(AC: 5kVRMS (min)).
TLP781 : 7.62mm pitch type DIP4
TLP781F : 10.16mm pitch type DIP4
Collector-emitter voltage: 80V (min.)
Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
Isolation voltage: 5000Vrms (min.)
UL recognized: UL1577, file No. E67349
BSI approved: BS EN60065:2002
Approved no.8961
BS EN60950-1:2006
Approved no.8962
SEMKO approval: EN60950-1,EN60065 under plan
Option(D4)type
VDE approved : DIN EN60747-5-2
Certificate No. 40021173
(Note): When an EN60747-5-2 approved type is needed,
Please designate “Option (D4)”
Construction mechanical rating
7.62mm Pitch
Standard Type
Creepage distance
6.5mm(min)
Clearance
6.5mm(min)
Insulation thickness
0.4mm(min)
10.16mm Pitch
TLPxxxF Type
8.0mm(min)
8.0mm(min)
0.4mm(min)
1
TOSHIBA
Weight: 0.25g (typ.)
TLP781F
Unit in mm
TOSHIBA
Weight: 0.25g (typ.)
Pin Configurations
(top view)
14
23
1 : Anode
2 : Cathode
3 : Emitter
4 : Collector
2007-12-05
Datasheet pdf - http://www.DataSheet4U.net/


Toshiba Electronic Components Datasheet

TLP781F Datasheet

GaAs IRED & Photo-Transistor

No Preview Available !

TLP781F pdf
www.DataSheet.co.kr
Current Transfer Ratio
Type
TLP781
Classi
fication
(Note 1)
(None)
Rank Y
Rank GR
Rank BL
Rank GB
Rank YH
Rank GRL
Rank GRH
Rank BLL
TLP781/TLP781F
Current Transfer Ratio (%)
(IC / IF)
IF = 5mA, VCE = 5V, Ta = 25°C
Min Max
50 600
50 150
100 300
200 600
100 600
75 150
100 200
150 300
200 400
Marking Of Classification
Blank, Y, Y+, YE,G, G+, B, B+,BL,GB
YE
GR
BL
GB
Y+
G
G+
B
(Note 1): Ex. rank GB: TLP781 (GB)
(Note 2): Application type name for certification test, please use standard product type name, i. e.
TLP781 (GB): TLP781
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
IF 60 mA
Forward current derating(Ta 39°C)
ΔIF / °C
0.7 mA / °C
Pulse forward current
(Note 3)
IFP
1
A
Power dissipation
PD 100 mW
Power dissipation derating
ΔPD / °C 1.0 mW / °C
Reverse voltage
VR 5 V
Junction temperature
Tj 125 °C
Collectoremitter voltage
VCEO
80
V
Emittercollector voltage
VECO
7
V
Collector current
IC 50 mA
Power dissipation(single circuit)
PC 150 mW
Power dissipation derating
(Ta 25°C)(single circuit)
ΔPC / °C 1.5 mW / °C
Junction temperature
Operating temperature range
Storage temperature range
Lead soldering temperature (10s)
Total package power dissipation
Total package power dissipation derating
(Ta 25°C)
Tj
Topr
Tstg
Tsol
PT
ΔPT / °C
125
55~110
55~125
260
250
2.5
°C
°C
°C
°C
mW
mW / °C
Isolation voltage
(Note 4)
BVS
5000
Vrms
(Note): Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 3): 100μs pulse, 100Hz frequency
(Note 4): AC, 1 min., R.H.60%. Apply voltage to LED pin and detector pin together.
2 2007-12-05
Datasheet pdf - http://www.DataSheet4U.net/


Part Number TLP781F
Description GaAs IRED & Photo-Transistor
Maker Toshiba Semiconductor
Total Page 15 Pages
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TLP781F pdf
TLP781F Datasheet PDF
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