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TC3889 Datasheet

5W Packaged Self-Bias PHEMT GaAs Power FETs

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TC3889 pdf
Preliminary
TC3889
PRE.2_04/27/2005
5W Packaged Self-Bias PHEMT GaAs Power FETs
FEATURES
5W Typical Output Power
12dB Typical Linear Power Gain at 2.0GHz
High Linearity:
IP3 = 47 dBm Typical
High Power Added Efficiency:
Nominal PAE of 35%
Breakdown Voltage: BVDGO 18V
Wg = 12 mm
100 % DC Tested
Suitable for High Reliability Application
PHOTO ENLARGEMENT
DESCRIPTION
The TC3889 is a self-bias flange ceramic packaged device with TC1806N PHEMT GaAs FETs, which is
designed to provide the single power supply application. The flange ceramic package provides excellent
thermal conductivity for the GaAs FET. The devices only need to provide the positive voltage to drain and
ground the source, which is suitable for oscillator, power amplifier application in a wide range of
commercial application. All devices are 100% DC tested to assure consistent quality.
ELECTRICAL SPECIFICATIONS (@ 2.0 GHz)
Symbol
P1dB
GL
IP3
PAE
CONDITIONS
Output Power at 1dB Gain Compression Point
VDS = 10 V
Linear Power Gain
VDS = 10 V
Intercept Point of the 3rd-order Intermodulation
VDS = 10 V, *PSCL = 26 dBm
Power Added Efficiency at 1dB Compression Power
IDS
BVDGO
Rth
Drain-Source Current at VDS = 10 V
Drain-Gate Breakdown Voltage at IDGO = 6mA
Thermal Resistance
Note: *PSCL: Output Power of Single Carrier Level.
MIN
36
18
TYP
37
12
47
35
1300
22
2.7
MAX
UNIT
dBm
dB
dBm
%
mA
Volts
°C/W
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P 1/1
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Part Number TC3889
Description 5W Packaged Self-Bias PHEMT GaAs Power FETs
Manufacturer Transcom
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