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TriQuint Semiconductor
TriQuint Semiconductor

TGA2622-CP Datasheet Preview

TGA2622-CP Datasheet

GaN Power Amplifier

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TGA2622-CP pdf
Applications
Weather and Marine Radar
TGA2622-CP
9 10 GHz 35 W GaN Power Amplifier
Product Features
Frequency Range: 9 10 GHz
PSAT: 45.5 dBm @ PIN = 18 dBm
PAE: >43% @ PIN = 18 dBm
Power Gain: 27.5 dB @ PIN = 18 dBm
Bias: VD = 28 V, IDQ = 290 mA, VG = -2.7 V Typical
(Pulsed VD: PW = 100 us and DC = 10 %)
Package Dimensions: 15.2 x 15.2 x 3.5 mm
Package base is pure Cu offering superior thermal
management
Functional Block Diagram
1 10
29
38
47
56
General Description
TriQuint’s TGA2622-CP is a packaged, high power X-
band amplifier fabricated on TriQuint’s TQGaN25 0.25 um
GaN on SiC production process. Operating from 9 10
GHz, the TGA2622-CP achieves 35 W saturated output
powers, a power-added efficiency of greater than 43 %,
and power gain of 27.5 dB.
The TGA2622-CP is packaged in a 10-lead 15x15 mm
bolt-down package with a Cu base for superior thermal
management. It can support a range of bias voltages and
performs well under both pulsed and CW conditions.
Both RF ports are internally DC blocked and matched to
50 ohms allowing for simple system integration.
The TGA2622-CP is ideally suited for both commercial
and defense applications.
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
Pad Configuration
Pad No.
1, 5
2, 4, 7, 9
3
6, 10
8
Symbol
VG
GND
RF In
VD
RF Out
Ordering Information
Part
TGA2622-CP
ECCN Description
3A001.b.2.b
9 10 GHz 35 W GaN
Power Amplifier
Preliminary Datasheet: Rev - 11-03-14
© 2014 TriQuint
- 1 of 15 -
Disclaimer: Subject to change without notice
www.triquint.com



TriQuint Semiconductor
TriQuint Semiconductor

TGA2622-CP Datasheet Preview

TGA2622-CP Datasheet

GaN Power Amplifier

No Preview Available !

TGA2622-CP pdf
TGA2622-CP
9 10 GHz 35 W GaN Power Amplifier
Absolute Maximum Ratings
Parameter
Value
Drain Voltage (VD)
40 V
Gate Voltage Range (VG)
Drain Current (ID)
Gate Current (IG)
-8 to 0V
4.3 A
-11 to 45 mA (1)
Power Dissipation (PDISS), 85°C, CW
Input Power (PIN), CW, 50Ω,
VD = 28V, 85°C
107 W
24 dBm
Input Power (PIN), CW, VSWR 3:1,
VD = 28V, 85°C
24 dBm
Channel Temperature (TCH)
275 °C
Mounting Temperature (30 seconds) 260 °C
Storage Temperature
-55 to 150 °C
Operation of this device outside the parameter ranges
given above may cause permanent damage. These are
stress ratings only, and functional operation of the device at
these conditions is not implied.
Notes:
(1) Max rating for IG is at Channel Temperature (TCH) of
200 °C
Recommended Operating Conditions
Parameter
Value
Drain Voltage (VD): Pulsed
28 V
Drain Current (IDQ)
290 mA
Drain Current Under RF Drive (ID_DRIVE) See Plots p. 6
Gate Voltage (VG)
-2.7 V (Typ.)
Gate Current Under RF Drive (IG_DRIVE) See Plots p. 6
Temperature (TBASE)
-40 to 85 °C
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended
operating conditions.
Electrical Specifications
Test conditions unless otherwise noted: 25 0C, VD = 28 V, IDQ = 290 mA, VG = -2.7 V Typical, Pulsed VD: PW = 100 us, DC = 10 %
Parameter
Min
Typical
Max
Units
Operational Frequency Range
9
10 GHz
Small Signal Gain
30 dB
Input Return Loss
>11 dB
Output Return Loss
>8 dB
Output Power (Pin = 18dBm)
45.5
dBm
Power Added Efficiency (Pin = 18dBm)
>43 %
Power Gain (Pin = 18dBm)
27.5 dB
Output Power Temperature Coefficient Pulsed
(calculated from 25 °C to 85 °C)
CW
-0.019
-0.023
dBm/°C
Recommended Operating Voltage:
20 28 32 V
Preliminary Datasheet: Rev - 11-03-14
© 2014 TriQuint
- 2 of 15 -
Disclaimer: Subject to change without notice
www.triquint.com


Part Number TGA2622-CP
Description GaN Power Amplifier
Maker TriQuint Semiconductor
Total Page 15 Pages
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