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TriQuint Semiconductor
TriQuint Semiconductor

TGA2752-SM Datasheet Preview

TGA2752-SM Datasheet

Power Amplifier

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TGA2752-SM pdf
Applications
Point-to-Point Radio
Linear C-band Sat-Com
Product Features
Frequency Range: 7.1 8.5 GHz
Power: 40 dBm Psat
Gain: 28 dB
TOI: 48 dBm at 30 dBm/tone
Integrated Power Detector
Bias: Vd1 = Vd2 = 6 V, Id1 + Id2 = 1000 mA, Vd3
= 28V, Id3 = 190mA
Package Dimensions: 7.0 x 9.0 x 0.9 mm
General Description
The TriQuint TGA2752-SM is a C-Band Power
Amplifier with integrated power detector. The
TGA2752-SM operates from 7.1 8.5 GHz and is
designed using TriQuint’s power GaAs pHEMT and
GaN HEMT production processes.
The TGA2752-SM typically provides 40 dBm of
saturated output power with small signal gain of 28
dB. Third Order Intercept is 48 dBm at 30 dBm SCL.
The TG2752-SM is available in a low-cost, surface
mount 42 lead 7x9 QFN package and is ideally
suited for Point-to-Point Radio.
Lead-free and RoHS compliant
TGA2752-SM
7.1 8.5 GHz Power Amplifier
TriQuint
TGA2752-SM
W1430015
C012
42 lead 7x9mm QFN package
Functional Block Diagram
42 41 40 39 38 37 36 35 34 33 32 31
1 30
2 29
3 28
4 27
5 26
6 25
7 24
8 23
9 22
10 11 12 13 14 15 16 17 18 19 20 21
Pin Configuration
Pin No.
Label
1, 2, 3, 4, 6, 7, 8, 9,11, 13,
15, 16, 17, 18, 19, 21, 22,
23, 24, 25, 27, 28, 29, 33,
NC
34, 35, 37, 39, 41
5 RF IN
10, 42
Vg12
12, 40
14, 38
20, 32
Vd1
Vd2
Vd3
26 RF OUT
30 Vref
31 Vdet
36 Vg3
Datasheet: Rev - 11-21-14
© 2014 TriQuint
Ordering Information
Part No. ECCN
Description
TGA2752-SM 3A001.b.2.b.2 7.1-8.5GHz 10W Amp
Standard T/R size = 500 pieces on a 7” reel
- 1 of 17 -
Disclaimer: Subject to change without notice
www.triquint.com



TriQuint Semiconductor
TriQuint Semiconductor

TGA2752-SM Datasheet Preview

TGA2752-SM Datasheet

Power Amplifier

No Preview Available !

TGA2752-SM pdf
Absolute Maximum Ratings
Parameter
Rating
Drain Voltage,Vd1, Vd2
9V
Drain Voltage,Vd3
32 V
Drain Current, Id1 + Id2
2443 mA
Drain Current, Id3
825 mA
Power Dissipation, Driver Stages,
Pdiss
7.2 W
Power Dissipation, Final Stage,
Pdiss
RF Input Power, CW, 50Ω, T = 25ºC
17 W
29 dBm
GaAs Channel Temperature, Tch
200 °C
GaN Channel Temperature, Tch
275 °C
Mounting Temperature (30 Seconds) 260 oC
Storage Temperature
-40 to 150 oC
Operation of this device outside the parameter ranges
given above may cause permanent damage. These are
stress ratings only, and functional operation of the device at
these conditions is not implied.
TGA2752-SM
7.1 8.5 GHz Power Amplifier
Recommended Operating
CPaornamdiettieorns
Min Typ Max Units
Operating Temp. Range -40 +25 +85
Vd1, Vd2
6
°C
V
Vd3
Id1 + Id2
Id3
28
1000
190
V
mA
mA
Vg12
-0.65
V
Vg3 -2.6 V
Id1 + Id2 drive (at 34
dBm Pout)
1050
mA
Id3 drive (at 34 dBm
Pout)
400 mA
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Datasheet: Rev - 11-21-14
© 2014 TriQuint
- 2 of 17 -
Disclaimer: Subject to change without notice
www.triquint.com


Part Number TGA2752-SM
Description Power Amplifier
Maker TriQuint Semiconductor
Total Page 17 Pages
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