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TSA24N50MR Datasheet Preview

TSA24N50MR Datasheet

N-Channel MOSFET

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TSA24N50MR pdf
TSA24N50MR
500V N-Channel MOSFET
General Description
This Power MOSFET is produced using Truesemi‘s
advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge
topology.
Features
• 24A,500V,Max.RDS(on)=0.2 Ω @ VGS =10V
• Low gate charge(typical 90nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings TJ=25unless otherwise specified
Symbol
Parameter
Value
VDSS
VGS
ID
IDM
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TC = 25
TC = 100
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
500
±30
24
15
96
1150
24
29
4.5
PD
Power Dissipation (TC = 25)
-Derate above 25
290
2.33
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
-55 to +150
300
Thermal Resistance Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance,Junction-to-Case
Thermal Resistance,Case-to-Sink Typ.
Thermal Resistance,Junction-to-Ambient
Typ.
--
0.24
--
Max.
0.43
--
40
Units
V
V
A
A
A
mJ
A
mJ
V/ns
W
W/
Units
/W
/W
/W
© 2015 Truesemi Semiconductor Corporation
Ver.B1
www.truesemi.com



Truesemi
Truesemi

TSA24N50MR Datasheet Preview

TSA24N50MR Datasheet

N-Channel MOSFET

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TSA24N50MR pdf
Electrical Characteristics TJ=25 unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250 uA
VGS = 10 V, ID = 12 A
gFS Forward Transconductance
VDS=40V,ID=12A
(Note 4)
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
BVDSS Breakdown Voltage Temperature
/ TJ Coefficient
VGS = 0 V, ID = 250 uA
ID = 250 uA, Referenced to
25
IDSS
IGSSF
IGSSR
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,Forward
Gate-Body Leakage Current,Reverse
VDS = 500 V, VGS = 0 V
VDS = 400 V, TJ = 125
VGS = 30 V, VDS = 0 V
VGS =- 30 V, VDS = 0 V
Dynamic Characteristics
2.0
--
--
500
--
--
--
--
--
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 250 V, ID = 24 A,
RG = 25 Ω
(Note 4,5)
VDS = 400 V, ID = 24 A,
VGS = 10 V
(Note 4,5)
Source-Drain Diode Maximum Ratings and Characteristics
--
--
--
--
--
--
--
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 24 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 24 A, VGS = 0 V
diF/dt = 100 A/μs (Note 4)
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=3.4mH, IAS=24A, VDD=50V, RG=25 Ω,Starting TJ=25
3. ISD≤24A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25
4. Pulse Test: Pulse width ≤ 300us, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
--
--
--
--
--
Typ Max Units
-- 4.0
0.16 0.2
15 --
V
S
-- -- V
0.5 -- V/
-- 1 uA
-- 10 uA
-- 100 nA
-- -100 nA
3500
520
55
--
--
--
pF
pF
pF
100 --
250 --
200 --
150 --
90 --
22 --
45 --
ns
ns
ns
ns
nC
nC
nC
-- 24
-- 96
-- 1.4
400 --
7.2 --
A
V
ns
uC
© 2015 Truesemi Semiconductor Corporation
Ver.B1
www.truesemi.com


Part Number TSA24N50MR
Description N-Channel MOSFET
Maker Truesemi
Total Page 7 Pages
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