http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf





Truesemi
Truesemi

TSB8N65M Datasheet Preview

TSB8N65M Datasheet

N-Channel MOSFET

No Preview Available !

TSB8N65M pdf
TSB8N65M / TSI8N65M
650V N-Channel MOSFET
General Description
This Power MOSFET is produced using Truesemi‘s
advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge
topology.
Features
• 7.5A, 650V, RDS(on) = 1.60@VGS = 10 V
• Low gate charge ( typical 29nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
D
D2-PAK
GS
GDS
I2-PAK
G
S
Absolute Maximum Ratings TC = 25°Cunless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
TSB8N65M
TSI8N65M
650
7.5 7.5 *
4.5 4.5 *
30 30 *
30
260
14.7
4.5
147 48
1.18 0.38
-55 to +150
300
Thermal Characteristics
Symbol
RJC
RCS
RJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
TSB8N65M
0.85
0.5
62.5
TSI8N65M
2.6
--
62.5
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W



Truesemi
Truesemi

TSB8N65M Datasheet Preview

TSB8N65M Datasheet

N-Channel MOSFET

No Preview Available !

TSB8N65M pdf
TSB8N65M / TSI8N65M
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
BVDSS Breakdown Voltage Temperature
/ TJ Coefficient
IDSS Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 A
ID = 250 A, Referenced to 25°C
VDS = 650 V, VGS = 0 V
VDS = 520 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
650
--
--
--
--
--
--
0.7
--
--
--
--
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source
On-Resistance
VDS = VGS, ID = 250 A
VGS = 10 V, ID = 3.75 A
2.0 --
-- 1.2
Max Units
--
--
1
10
100
-100
V
V/°C
A
A
nA
nA
4.5 V
1.6
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1000
-- 110
-- 12.6
--
--
--
pF
pF
pF
VDD = 325 V, ID = 7.5 A,
RG = 25
(Note 4, 5)
VDS = 520 V, ID = 7.5 A,
VGS = 10 V
(Note 4, 5)
--
--
--
--
--
--
--
20
50
80
70
29
4.7
12.5
--
--
--
--
-
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 7.5
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- -- 30
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 7.5 A
-- -- 1.4
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 7.5 A,
dIF / dt = 100 A/s
(Note 4)
--
--
350
3.3
--
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 10 mH, IAS = 7.5A, VDD = 50V, RG = 25 Starting TJ = 25°C
3. ISD 7.5 A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300s, Duty cycle 2%
5. Essentially independent of operating temperature
A
A
V
ns
C


Part Number TSB8N65M
Description N-Channel MOSFET
Maker Truesemi
Total Page 7 Pages
PDF Download
TSB8N65M pdf
Download PDF File
[partsNo] view html
View PDF for Mobile






Related Datasheet

1 TSB8N65M N-Channel MOSFET Truesemi
Truesemi
TSB8N65M pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components