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TSF50R380S1 Datasheet Preview

TSF50R380S1 Datasheet

N-Channel MOSFET

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TSF50R380S1 pdf
TSF50R380S1
500V 11A N-Channel SJ-MOSFET
General Description
Truesemi SJ-FET is new generation of high voltage MOSFET family
that is utilizing an advanced charge balance mechanism for outstanding
low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction
loss, provide superior switching performance, and withstand
extreme dv/dt rate and higher avalanche energy.
SJ-FET is suitable for various AC/DC power conversion in
switching mode operation for higher efficiency.
Features
• 550V @TJ = 150
• Typ. RDS(on) = 0.35Ω
• Ultra Low gate charge (typ. Qg = 35nC)
• 100% avalanche tested
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current -Continuous (TC = 25)
-Continuous (TC = 100)
Drain Current Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25)
-Derate above 25
Operating and Storage Temperature
Range
Maximum Lead Temperature for Soldering
Purpose,1/8” from Case for 5 Seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance, Junction-to-Case
RθCS Thermal Resistance, Case-to-Sink Typ.
RθJA Thermal Resistance, Junction-to-Ambient
© 2015 Truesemi Semiconductor Corporation
Value
500
11*
7*
32*
±30
120
2
0.32
15
35
0.3
-55 to +150
300
Value
4.0
--
80
Unit
V
A
A
V
mJ
A
mJ
V/ns
W
W/
Unit
/W
/W
/W
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Truesemi
Truesemi

TSF50R380S1 Datasheet Preview

TSF50R380S1 Datasheet

N-Channel MOSFET

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TSF50R380S1 pdf
Electrical Characteristics TC = 25unless otherwise noted
Symbol
Parameter
Conditions
Min
Off Characteristics
BVDSS
ΔBVDSS / ΔTJ
IDSS
IGSSF
IGSSR
On Characteristics
VGS(th)
RDS(on)
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
VGS = 0V, ID = 250µA,
TJ = 25
VGS = 0V, ID = 250µA,
TJ = 150
ID = 250µA, Referenced to
25
VDS = 500V, VGS = 0V
-TJ = 150
Gate-Body Leakage Current,
Forward
VGS = 30V, VDS = 0V
Gate-Body Leakage Current,
Reverse
VGS = -30V, VDS = 0V
500
--
--
--
--
--
Gate Threshold Voltage
Static Drain-Source On-
Resistance
VDS = VGS, ID = 250µA
VGS = 10V, ID = 5.5A
2.5
--
gFS Forward Trans conductance VDS = 40V, ID = 5.5A (Note 4) --
Rg
Gate resistance
f = 1MHz ,open drain
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss
Reverse Transfer
Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
Switching Characteristics
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 400V, ID = 5.5A
RG = 20Ω(Note 4, 5)
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg
Total Gate Charge
VDS = 480V, ID = 5.5A
Qgs
Gate-Source Charge
VGS = 10V (Note 4, 5)
Qgd Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward
Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward
Voltage
VGS = 0V, IF = 5.5A
trr
Reverse Recovery Time
VGS = 0V, IF = 5.5A
Qrr Reverse Recovery Charge diF/dt =100A/µs (Note 4)
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ
--
550
0.6
--
10
--
--
--
0.35
16
4.5
550
140
7
15
10
110
9
35
3.8
4
-­
-­
0.9
240
3.1
Max
--
--
--
1
--
100
-100
4.5
0.38
-­
--
--
--
--
-­
-­
-­
-­
--
-­
-­
11
38
1.5
-­
-­
Unit
V
V
V/
µA
µA
nA
nA
V
Ω
S
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
A
V
ns
µC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS=2A, VDD=50V, Starting TJ=25
3. ISD≤11A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25
4. Pulse Test: Pulse width ≤ 300us, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
© 2015 Truesemi Semiconductor Corporation
2
www.truesemi.com


Part Number TSF50R380S1
Description N-Channel MOSFET
Maker Truesemi
Total Page 8 Pages
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