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TSF65R600WT Datasheet Preview

TSF65R600WT Datasheet

N-Channel MOSFET

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TSF65R600WT pdf
TSF65R600WT
650V 7.5A N-Channel SJ-MOSFET
General Description
Truesemi SJ-FET is new generation of high voltage MOSFET family
that is utilizing an advanced charge balance mechanism for outstanding
low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction
loss, provide superior switching performance, and withstand
extreme dv/dt rate and higher avalanche energy.
SJ-FET is suitable for various AC/DC power conversion in
switching mode operation for higher efficiency.
Features
• 700V @TJ = 150
• Max. RDS(on) = 0.6Ω
• Ultra Low gate charge (typ. Qg = 14nC)
• 100% avalanche tested
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
Drain-Source Voltage
Drain Current -Continuous (TC = 25)
-Continuous (TC = 100)
650
7.5*
4.7*
IDM Drain Current Pulsed
(Note 1)
22*
VGSS Gate-Source voltage
±30
EAS
PD
TJ, TSTG
TL
Single Pulsed Avalanche Energy (Note 2)
Power Dissipation (TC = 25)
Operating and Storage Temperature
Range
Maximum Lead Temperature for Soldering
Purpose,1/8” from Case for 5 Seconds
160
29
-55 to +150
300
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
Typ.
RθJC Thermal Resistance, Junction-to-Case
--
RθJA Thermal Resistance, Junction-to-Ambient
--
Max.
4.3
62.5
Unit
V
A
A
V
mJ
W
Unit
/W
/W
© 2015 Truesemi Semiconductor Corporation
www.truesemi.com



Truesemi
Truesemi

TSF65R600WT Datasheet Preview

TSF65R600WT Datasheet

N-Channel MOSFET

No Preview Available !

TSF65R600WT pdf
Electrical Characteristics TJ = 25unless otherwise noted
Symbol
Parameter
Conditions
Off Characteristics
BVDSS
IDSS
IGSS
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current
VGS = 0V, ID = 250µA,
VDS = 650V, VGS = 0V
TJ = 25
VDS = 520V, VGS = 0V
TJ = 125
Gate-Body Leakage Current, VGS = ±30V, VDS = 0V
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source On-
Resistance
VDS = VGS, ID = 250µA
VGS = 10V, ID = 2.5A
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 50V, VGS = 0V,
Coss
Output Capacitance
f = 1.0MHz
Crss
Reverse Transfer
Capacitance
Switching Characteristics
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDS = 325V, ID = 7.5A
RG = 25Ω
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg
Total Gate Charge
VDS = 520V, ID = 7.5A
Qgs
Gate-Source Charge
VGS = 10V
Qgd Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward
Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward
Voltage
VGS = 0V, IF = 7.5A
trr
Qrr
Reverse Recovery Time
Reverse Recovery Charge
VGS = 0V, IF = 7.5A
diF/dt =100A/µs
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS=3.0A, VDD=50V, RG=25ΩStarting TJ=25
3. Pulse Test: Pulse width ≤ 300us, Duty Cycle ≤ 2%
Min Typ Max Unit
650 -- --
V
10
-- --
100
µA
µA
-- -- ±100 nA
2.0 -- 4.0
-- 0.54 0.6
V
Ω
-- 590
-- 41
-- 6.5
770
54
8.5
pF
pF
pF
-- 18 46
-- 20 50
-- 60 130
-- 22 54
-- 14.0 18.5
-- 3.2 --
-- 4.2 --
ns
ns
ns
ns
nC
nC
nC
-- --
-- --
-- --
-- 300
-- 2.4
7.5
22
1.4
--
--
A
A
V
ns
µC
© 2015 Truesemi Semiconductor Corporation
2
www.truesemi.com


Part Number TSF65R600WT
Description N-Channel MOSFET
Maker Truesemi
Total Page 7 Pages
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