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TSP20N65S Datasheet Preview

TSP20N65S Datasheet

N-Channel MOSFET

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TSP20N65S pdf
TSP20N65S,TSF20N65S, TSB20N65S
650V N-Channel MOSFET
September, 2013
SJ-FET
Description
SJ-FET is new generation of high voltage MOSFET family that
is utilizing an advanced charge balance mechanism for
outstanding low on-resistance and lower gate charge
performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy. SJ-
FET is suitable for various AC/DC power conversion
inswitching mode operation for higher efficiency.
Features
• 650V @TJ = 150
• Typ. RDS(on) = 0.16Ω
• Ultra Low Gate Charge (typ. Qg = 63nC)
• 100% avalanche tested
• Rohs Compliant
D2-PAK (TO-263)
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current -Continuous (TC = 25)
-Continuous (TC = 100)
Drain Current - Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25)
-Derate above 25
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering
Purpose,
1/8” from Case for 5 Seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
TSB20N65S
20*
10*
60*
151
1.5
TSP20N65S
650
20
10
60
±30
600
20
20.5
4.5
151
1.67
-55 to +150
300
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθCS
Thermal Resistance, Case-to-Sink Typ.
RθJA
Thermal Resistance, Junction-to-Ambient
TSB20N65S
1.5
0.5
75
TSP20N65S
0.6
--
62
TSF20N65S
20*
10*
60*
35
0.3
Unit
V
A
A
V
mJ
A
mJ
V/ns
W
W/
TSF20N65S
3.6
--
62
Unit
/W
/W
/W
©2013 True Semiconductor Corporation
TSP20N65S/TSF20N65S/TSB20N65S Rev.1.0



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TSP20N65S Datasheet Preview

TSP20N65S Datasheet

N-Channel MOSFET

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TSP20N65S pdf
Electrical Characteristics TC = 25unless otherwise noted
Symbol
Parameter
Conditions
Min Typ Max Unit
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA, TJ = 25650 --
--
V
ΔBVDSS / ΔTJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGTSF
Gate-Body Leakage Current,
Forward
VGS = 0V, ID = 250µA, TJ =
150
ID = 250µA, Referenced to 25
VDS = 650V, VGS = 0V VDS
=480V, TC = 125
VGS = 30V, VDS = 0V
-- 700 -- V
-- 0.6 -- V/
--
--
1 µA
10 µA
-- -- 100 nA
IGSSR
Gate-Body Leakage Current,
Reverse
VGS = -30V, VDS = 0V
-- -- -100 nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source On-Resistance
VDS = VGS, ID = 250µA
VGS = 10V, ID = 10A
2.5 -- 4.5
-- 0.16 0.19
V
Ω
gFS Forward Transconductance
Rg Gate Resistance
Dynamic Characteristics
Ciss Input Capacitance
VDS = 40V, ID =5A (Note 4)
F=1MHz, open drain
-- 16 --
-- 4.5 --
S
Ω
VDS = 25V, VGS = 0V, f = 1.0MHz
-- 1440 1870 pF
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
-- 300 --
-- 10 --
pF
pF
VDD = 400V, ID = 10A RG =
20Ω(Note 4, 5)
VDS = 480V, ID = 20A VGS = 10V
(Note 4, 5)
--
--
--
--
--
--
--
25 -- ns
55 -- ns
70 -- ns
40 -- ns
70 -80 nC
7.8 -- nC
9 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
ISM
VSD
trr
Qrr
Irrm
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward
Voltage
Reverse Recovery Time
Reverse Recovery Charge
VGS = 0V, IS = 10A
VGS = 0V, IS = 10A dIF/dt
=100A/µs (Note 4)
Peak Reverse Recovery Current
-- -- 20 A
-- -- 60 A
-- -- 1.5 V
-- 475 --
ns
-- 5.8 -- µC
-- 35 --
A
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=10.5mH, IAS=10A, VDD=150V, Starting TJ=25
3. ISD20A, di/dt 200A/us, VDD BVDSS, Starting TJ = 25
4. Pulse Test: Pulse width 300us, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
©2013 True Semiconductor Corporation
TSP20N65S/TSF20N65S/TSB20N65S Rev.1.0


Part Number TSP20N65S
Description N-Channel MOSFET
Maker Truesemi
Total Page 10 Pages
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