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Tuofeng Semiconductor
Tuofeng Semiconductor

2015 Datasheet Preview

2015 Datasheet

Single P-Channel Power MOSFET

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2015 pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
2015
Single P-Channel, -20V, -2.4A, Power MOSFET
VDS (V)
-20
Rds(on) (ȍ)
0.081@ VGS=4.5V
0.103@ VGS=2.5V
Descriptions
The 2015 is P-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product 2015 is Pb-free and
Halogen-free.
Features
z Trench Technology
z Supper high density cell design
z Excellent ON resistance for higher DC current
z Extremely Low Threshold Voltage
z Small package SOT-23
Applications
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit
z Power Switch
z Load Switch
z Charging
SOT-23
D
3
12
GS
Pin configuration (Top view)



Tuofeng Semiconductor
Tuofeng Semiconductor

2015 Datasheet Preview

2015 Datasheet

Single P-Channel Power MOSFET

No Preview Available !

2015 pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
Absolute Maximum ratings
2015
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Maximum Power Dissipation a
Continuous Drain Current b
Maximum Power Dissipation b
Pulsed Drain Current c
Operating Junction Temperature
Lead Temperature
Storage Temperature Range
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
Symbol
VDS
VGS
ID
PD
ID
PD
IDM
TJ
TL
Tstg
10 S Steady State
-20
f8
-2.4 -2.2
-1.9 -1.7
0.9 0.8
0.5 0.5
-2.2 -2.0
-1.7 -1.6
0.7 0.6
0.5 0.4
-10
150
260
-55 to 150
Unit
V
A
W
A
W
A
°C
°C
°C
Thermal resistance ratings
Parameter
Junction-to-Ambient Thermal Resistance a t ” 10 s
Steady State
Junction-to-Ambient Thermal Resistance b t ” 10 s
Steady State
Junction-to-Case Thermal Resistance
Steady State
Symbol
RșJA
RșJA
RșJC
Typical
105
120
130
145
60
Maximum
135
155
160
190
75
Unit
°C/W
a Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper
b Surface mounted on FR-4 board using minimum pad size, 1oz copper
c Pulse width<380μs, Duty Cycle<2%
d Maximum junction temperature TJ=150°C.


Part Number 2015
Description Single P-Channel Power MOSFET
Maker Tuofeng Semiconductor
Total Page 7 Pages
PDF Download
2015 pdf
Download PDF File


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