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Tuofeng Semiconductor
Tuofeng Semiconductor

2021 Datasheet Preview

2021 Datasheet

N-Channel Small Signal MOSFET

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2021 pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
2021
N-Channel, 20V, 0.89A, Small Signal MOSFET
VDS (V)
20
Rds(on) (ȍ)
0.310@ VGS=4.5V
0.360@ VGS=2.5V
0.460@ VGS=1.8V
Descriptions
The 2021 is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, load switch and level shift.
Standard Product 2021 is Pb-free.
Features
z Trench Technology
z Supper high density cell design
z Excellent ON resistance
z Extremely Low Threshold Voltage
z Small package SOT-323
Applications
z DC-DC converter circuit
z Small Signal Switch
z Load Switch
z Level Shift
z
SOT-323
D
3
12
GS
Pin configuration (Top view)



Tuofeng Semiconductor
Tuofeng Semiconductor

2021 Datasheet Preview

2021 Datasheet

N-Channel Small Signal MOSFET

No Preview Available !

2021 pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
2021
Absolute Maximum ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA =25°C
Symbol
VDS
VGS
ID
10 S
Steady State
20
±6
0.58 0.55
Unit
V
A
Maximum Power Dissipation
Pulsed Drain Current c
Operating Junction Temperature
Lead Temperature
Storage Temperature Range
TA =25°C
PD
IDM
TJ
TL
Tstg
0.37 0.31
1.4
150
260
-55 to 150
W
A
°C
°C
°C
Thermal resistance ratings
Parameter
Junction-to-Ambient Thermal Resistance a t ” 10 s
Steady State
Junction-to-Ambient Thermal Resistance b t ” 10 s
Steady State
Junction-to-Case Thermal Resistance
Steady State
Symbol
RșJA
RșJA
RșJC
Typical
275
325
375
445
260
Maximum
335
395
430
535
300
Unit
°C/W


Part Number 2021
Description N-Channel Small Signal MOSFET
Maker Tuofeng Semiconductor
Total Page 6 Pages
PDF Download
2021 pdf
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2021 pdf
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