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Tuofeng Semiconductor
Tuofeng Semiconductor

90N03 Datasheet Preview

90N03 Datasheet

Power-Transistor

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90N03 pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• Ultra low Rds(on)
• 100% Avalanche tested
Product Summary
V DS
R DS(on),max
ID
90N03
30 V
6.0 m
80 A
TO-251
3
2
1
Type
90N03L
Package
TO-251
Marking
90N03L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=80 A
Avalanche current, single pulse I AS T C=25 °C
Gate source voltage
V GS
-
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1
-
Value
Unit
80
320
240
80
±20
95
-55 ... +175
55/175/56
A
mJ
A
V
w
°C
1



Tuofeng Semiconductor
Tuofeng Semiconductor

90N03 Datasheet Preview

90N03 Datasheet

Power-Transistor

No Preview Available !

90N03 pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
90N03
Parameter
Symbol
Conditions
Thermal characteristics2)
Thermal resistance, junction - case
SMD version, device on PCB
R thJC
R thJA
-
minimal footprint
6 cm2 cooling area3)
min.
Values
typ.
Unit
max.
- - 1.1 K/W
- - 62
- - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
30
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=250uA
1.0
1.5
Zero gate voltage drain current
I DSS
V DS=24 V, V GS=0 V,
T j=25 °C
50 nA
Gate-source leakage current
Drain-source on-state resistance
I GSS
R DS(on)
V GS=±20V V DS=0 V
V GS=4.5 V, ID=20 A
V GS=10 V, I D=40 A
± 100 nA
10.0 m
6.0
2


Part Number 90N03
Description Power-Transistor
Maker Tuofeng Semiconductor
Total Page 7 Pages
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