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Tyco Electronics
Tyco Electronics

DU28200M Datasheet Preview

DU28200M Datasheet

RF MOSFET Power Transistor/ 2OOW/ 28V 2 - 175 MHz

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DU28200M pdf
an AMP company
RF MOSFET Power Transistor, 2OOW,28V
2 - 175 MHz
DU28200M
Features
N-Channel Enhancemenr Mode Device
DMOS Structure
Lower Capacitances for Broadband Operation
High Saturated Output Power
Lower Noise Figure Than Competitive Devices
P&--4
v2.00
I
Absolute Maximum Ratings at 25°C
Parameter
I Drain-SourceVoltage
Gate-Source Voltage
Drain-Source Current
I Power Dissipation
Junction Temperature
StorageTemperature
Thermal Resistance
I Symbol I Rating
1 Units 1
( V,, (
V
OS
‘DS
65
20
20
Iv
V
A
I
1 P,
TJ
T
STG
/ 389
200
1W
“C
-65 to +150
“C
1
Electrical Characteristics at 25°C
Parameter
Test Conditions
Drain-Source Breakdown Voltage
BVDss 65 - V V,,=O.O V, I,,=250 mA
Drain-Source Leakage Current
Gate-Source Leakage Current
1 Gate Threshold Voltage
FonvardTransconductance
Input Capacitance
Output Capacitance
( Reverse Capacitance
Power Gain
Drain Efficiency
Load MismatchTolerance
‘cm 5.0 n-IA V,,=28.0 V, V,,=O.O V‘
‘GSS
5.0 pA v,,=20.0 v, V,stO.O v
I vG,rr,, 1 2.0 1 6.0 1 v I v,,=~o.ov, 1,,=500.0 mA
GM 2.5 - S V,,=lO.O V, I,,=50 A, ~v,,=l .O V, 80~ Pulse’
CISS
- 225 pF Vr,,=28.0 V, F=l .OMHz’
COSS 200 pF V,,=28.0 V, F=l .OMHz’
I CFSS 1 - ( 40 1 pF 1 V,,=28.0 V, F=l.O MHz’
GP 13 - dB V,,=28.0 V, I,,=1 000 mA, Pe~200.0 W, F=l75 MHz
% 55 - % V,,=28.0 V. I,,=1 000 mA, P,, -200.0 W, F=175 MHz
VSWR-T
-
lo:1
- V-,=28.0 V. I,,=1000 mA. P,,s200.0 W, F=175 MHz
* Per Side
Specifications Subject to Change Without Notice.
I
I



Tyco Electronics
Tyco Electronics

DU28200M Datasheet Preview

DU28200M Datasheet

RF MOSFET Power Transistor/ 2OOW/ 28V 2 - 175 MHz

No Preview Available !

DU28200M pdf
RF MOSFET Power Transistor, 2OOW, 28V
Typical Broadband Performance Curves
GAIN vs FREQUENCY
30
V&3 V l,o=lOO mA P,f200
W
DU28200M
v2.00
EFFICIENCY vs FREQUENCY
6or VDD=28 V I,,=1000 mA P,,=200 W
10 -I -
25
50 100
FREQUENCY (MHz)
150
200
50
25
50 loo
FRECXJENCY (MHz)
150
200
POWER OUTPUT vs POWER INPUT
V,,=28 V IDp=l 000 mA
300
z 250
5
P 200
5
c0al- 1050 f
;
.
30 MHz
f
100 MHz
200 MHz
50
0 0.5 1 2 3 4 5
POWER INPUT (W)


Part Number DU28200M
Description RF MOSFET Power Transistor/ 2OOW/ 28V 2 - 175 MHz
Maker Tyco Electronics
Total Page 3 Pages
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