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Tyco Electronics
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MA4AGBLP912 Datasheet Preview

MA4AGBLP912 Datasheet

AlGaAs Beam Lead PIN Diode

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MA4AGBLP912 pdf
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AlGaAs Beam Lead
PIN Diode
V 1.00
Features
n Ultra Low Capacitance < 22 fF
n Excellent RC Product < 0.10 pS
n High Switching Cutoff Frequency > 110 GHz
n 5 Nanosecond Switching Speed
n Driven by Standard +5 V TTL PIN Diode Driver
n Silicon Nitride Passivation
n Polyamide Scratch Protection
Outline ( Topview )
-
+
Description
M/A-COM's MA4AGBLP912 is an Aluminum-Gallium-Arsenide
Anode Enhanced, Beam Lead PIN Diode. AlGaAs anodes, which
utilize M/A-COM’s patent pending hetero-junction technology,
produce less diode “On” resistance than conventional GaAs
devices. These devices are fabricated on a OMCVD epitaxial wafer
using a process designed for high device uniformity and extremely
low parasitics. The diodes themselves exhibit low series resistance
( 4 ), low capacitance ( 20 fF ), and extremely fast switching
speed, ( 5 nS ). They are fully passivated with silicon nitride and
have an additional layer of a polymer for scratch protection. The
protective coating prevents damage to the junction and the anode
air bridges during handling.
Applications
The ultra low capacitance of the MA4AGBLP912 device allows
use through W-band (110 GHz) applications. The low RC product
and low profile of the PIN diodes makes it ideal for use in
microwave and millimeter wave switch designs, where lower
insertion loss and higher isolation are required. The + 10 mA ( low
loss state ) and the 0v ( isolation state ) bias of the diodes allows
the use a simple + 5 V TTL gate driver. These AlGaAs diodes are
used as switching arrays on radar systems, high-speed ECM
circuits, optical switching networks, instrumentation, and other
wideband multi-throw switch assemblies.
Absolute Maximum Ratings
@ +25 °C1
Parameter
Maximum Rating
Operating Temperature
-65 °C to +125 °C
Storage Temperature
-65 °C to +150 °C
Mounting Temperature
+235 °C for 10 sec.
C.W. Incident RF Power
+ 23 dBm C. W.
Forward D.C. Current
40 mA
Reverse D.C. Voltage @ -10 µA
-50 V
1. Exceeding any of these values may result in permanent
damage



Tyco Electronics
Tyco Electronics

MA4AGBLP912 Datasheet Preview

MA4AGBLP912 Datasheet

AlGaAs Beam Lead PIN Diode

No Preview Available !

MA4AGBLP912 pdf
AlGaAs Beam Lead PIN Diode
Electrical Specifications @ TA = 25 °C
Parameters and Test Conditions
Symbol and Unit
Total Capacitance at -5 V at 10 GHz1
Forward Resistance at +20 mA at 10 GHz2
Forward Voltage at +10 mA
Leakage Current at -40 V
Minority Carrier Lifetime
Ct
Rs
Vf
Ir
TL
fF
Ohms
Volts
nA
nS
MA4AGBLP912
V 1.00
Min.
-
-
-
-
-
Units
Typ.
20
4.0
1.36
-50
5
Max.
22
4.9
1.50
-300
10
NOTES:
1. Reverse Bias Capacitance is measured as a Single Series diode at -5 V in a 50 test fixture at 10 GHz.
2. Forward Series Resistance is measured as a Single Series diode at 20 mA in a 50 test fixture at 10 GHz.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
2
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300


Part Number MA4AGBLP912
Description AlGaAs Beam Lead PIN Diode
Maker Tyco Electronics
Total Page 5 Pages
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