http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf





UBIQ
UBIQ

QM3006D Datasheet Preview

QM3006D Datasheet

N-Ch 30V Fast Switching MOSFETs

No Preview Available !

QM3006D pdf
QM3006D
General Description
N-Ch 30V Fast Switching MOSFETs
Product Summery
The QM3006D is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The QM3006D meet the RoHS and Green Product
requirement , 100% EAS guaranteed with full
function reliability approved.
Features
BVDSS
30V
RDSON
5.5m
ID
80A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
TO252 Pin Configuration
D
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
ID@TA=25
ID@TA=70
IDM
EAS
IAS
PD@TC=25
PD@TA=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation4
Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
S
G
Rating
10s Steady State
30
±20
80
57
27 17
23 14.5
160
252
48
53
6 2.4
-55 to 175
-55 to 175
Units
V
V
A
A
A
A
A
mJ
A
W
W
Thermal Data
Symbol
RθJA
RθJA
RθJC
Parameter
Thermal Resistance Junction-ambient (Steady State)1
Thermal Resistance Junction-Ambient 1 (t 10s)
Thermal Resistance Junction-Case1
1
Typ.
---
---
---
Max.
62
25
2.8
Unit
/W
/W
/W
Rev A.02 D051311



UBIQ
UBIQ

QM3006D Datasheet Preview

QM3006D Datasheet

N-Ch 30V Fast Switching MOSFETs

No Preview Available !

QM3006D pdf
QM3006D
N-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
VGS(th)
Gate Threshold Voltage
VGS(th) Temperature Coefficient
IDSS Drain-Source Leakage Current
IGSS
gfs
Rg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=250uA
Reference to 25, ID=1mA
VGS=10V , ID=30A
VGS=4.5V , ID=15A
VGS=VDS , ID =250uA
VDS=24V , VGS=0V , TJ=25
VDS=24V , VGS=0V , TJ=55
VGS=±20V , VDS=0V
VDS=5V , ID=30A
VDS=0V , VGS=0V , f=1MHz
VDS=15V , VGS=4.5V , ID=15A
VDD=15V , VGS=10V , RG=3.3Ω
ID=15A
VDS=15V , VGS=0V , f=1MHz
Min.
30
---
---
---
1.0
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
0.028
4.7
7.5
1.5
-6.16
---
---
---
43
1.7
20
7.6
7.2
7.8
15
37.3
10.6
2295
267
210
Max.
---
---
5.5
9
2.5
---
1
5
±100
---
3.1
28
10.6
10.1
15.6
27
74.6
21.2
3213
374
294
Unit
V
V/
mΩ
V
mV/
uA
nA
S
Ω
nC
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy5
Conditions
VDD=25V , L=0.1mH , IAS=24A
Min.
63
Typ.
---
Max.
---
Unit
mJ
Diode Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current1,6
Pulsed Source Current2,6
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25
IF=30A , dI/dt=100A/µs , TJ=25
Min.
---
---
---
---
---
Typ.
---
---
---
14
5
Max.
80
160
1
---
---
Unit
A
A
V
nS
nC
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=48A
4.The power dissipation is limited by 175junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2


Part Number QM3006D
Description N-Ch 30V Fast Switching MOSFETs
Maker UBIQ
Total Page 4 Pages
PDF Download
QM3006D pdf
Download PDF File


Buy Electronic Components




Related Datasheet

1 QM3006B N-Ch 30V Fast Switching MOSFETs UBIQ
UBIQ
QM3006B pdf
2 QM3006D N-Ch 30V Fast Switching MOSFETs UBIQ
UBIQ
QM3006D pdf
3 QM3006M3 N-Ch 30V Fast Switching MOSFETs UBIQ
UBIQ
QM3006M3 pdf
4 QM3006M6 N-Ch 30V Fast Switching MOSFETs UBIQ
UBIQ
QM3006M6 pdf
5 QM3006N3 N-Ch 30V Fast Switching MOSFETs UBIQ
UBIQ
QM3006N3 pdf
6 QM3006P N-Ch 30V Fast Switching MOSFETs UBIQ
UBIQ
QM3006P pdf
7 QM3006S N-Ch 30V Fast Switching MOSFETs UBIQ
UBIQ
QM3006S pdf
8 QM3006U N-Ch 30V Fast Switching MOSFETs UBIQ
UBIQ
QM3006U pdf
9 QM3006U1 MOSFETs UBIQ
UBIQ
QM3006U1 pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components