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UNIKC
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P0120HLB Datasheet Preview

P0120HLB Datasheet

N-Channel Enhancement Mode MOSFET

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P0120HLB pdf
P0120HLB
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
200V
1.4Ω @VGS = 10V
ID
0.8A
SOT- 223
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
TA = 25 °C
TA = 70 °C
ID
0.8
0.7
Pulsed Drain Current1
IDM 3.5
Avalanche Current
IAS 2.6
Avalanche Energy
L = 1mH
EAS
3.4
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2.4
1.5
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
TYPICAL
MAXIMUM UNITS
53 °C / W
REV 1.0
1 2016/6/15



UNIKC
UNIKC

P0120HLB Datasheet Preview

P0120HLB Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

P0120HLB pdf
P0120HLB
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
200
1 2.2
3
V
±100 nA
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
IDSS
RDS(ON)
gfs
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V , TJ = 55 °C
VGS = 4.5V, ID = 0.5A
VGS = 10V, ID = 0.5A
VDS = 10V, ID = 0.5A
1
mA
10
1.5 1.9
1.2 1.4
Ω
1.2 S
DYNAMIC
Input Capacitance
Ciss
94
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
30 pF
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg(VGS=10V)
Qg(VGS=4.5V
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 160V,
VGS = 10V, ID = 0.8A
VDS = 100V, ID @ 0.8A
VGS = 10V, RGS = 6Ω
8
3.7
1.7
nC
1.2
1.4
5
16
nS
8
18
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 0.8A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 0.8A, dl/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
0.8
1
68
118
A
V
nS
nC
REV 1.0
2 2016/6/15


Part Number P0120HLB
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 8 Pages
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