http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf





UNIKC
UNIKC

P0165EI Datasheet Preview

P0165EI Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

P0165EI pdf
P0165EI
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
650V
10.6Ω @VGS = 10V
ID
1A
TO-251
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 650
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1,2
Avalanche Current3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
ID
IDM
IAS
EAS
1
0.7
1.8
0.5
1.25
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
37
15
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed
3VDD = 50V , L = 10mH ,starting TJ = 25˚C
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
3.4
62.5
UNITS
°C / W
REV 1.0
1 2016/1/15



UNIKC
UNIKC

P0165EI Datasheet Preview

P0165EI Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

P0165EI pdf
P0165EI
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±30V
VDS = 650V, VGS = 0V, TC = 25 °C
VDS = 520V, VGS = 0V , TC = 100 °
C
VGS = 10V, ID = 0.5A
650
2
VDS = 15V, ID = 0.5A
3.1 4
±100
1
10
8.5 10.6
2
V
nA
mA
Ω
S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Ciss
Coss
Crss
Qg
Qgs
Qgd
VGS = 0V, VDS = 25V, f = 1MHz
VDD = 520V, ID = 1A,VGS= 10V
161
33
10
3.4
0.7
0.8
pF
nC
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 1A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 1A, dlF/dt = 100A / mS
253
0.64
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
1
1
A
V
nS
uC
REV 1.0
2 2016/1/15


Part Number P0165EI
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 8 Pages
PDF Download
P0165EI pdf
Download PDF File


Buy Electronic Components




Related Datasheet

1 P0165ED N-Channel Enhancement Mode MOSFET UNIKC
UNIKC
P0165ED pdf
2 P0165EI N-Channel Enhancement Mode MOSFET UNIKC
UNIKC
P0165EI pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components