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P0270ATF Datasheet Preview

P0270ATF Datasheet

N-Channel Enhancement Mode MOSFET

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P0270ATF pdf
P0270ATF / P0270ATFS
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
700V
6.3Ω @VGS = 10V
ID
2A
TO-220F
TO-220FS
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1
Avalanche Energy3
TC = 25 °C
TC = 100 °C
ID
IDM
EAS
2
1
8
5
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
26
10
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
3VDD = 50V, L = 10mH, starting TJ = 25°C
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
4.7
62.5
UNITS
°C / W
REV 1.0
1 2014/10/14



UNIKC
UNIKC

P0270ATF Datasheet Preview

P0270ATF Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

P0270ATF pdf
P0270ATF / P0270ATFS
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±30V
700
2.5 3.8 4.5
±100
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
IDSS
RDS(ON)
VDS = 700V, VGS = 0V
VDS = 560V, VGS = 0V , TJ = 125 °C
VGS = 10V, ID = 1A
25
250
5.5 6.3
Forward Transconductance1
gfs
VDS = 10V, ID = 1A
1.5
DYNAMIC
Input Capacitance
Ciss
333
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
42
Reverse Transfer Capacitance
Crss
Total Gate Charge2
Qg
Gate-Source Charge2
Qgs VDS =560V, VGS = 10V, ID = 2A
Gate-Drain Charge2
Qgd
Turn-On Delay Time2
td(on)
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = 350V, ID @ 2A,
VGS = 10V, RGS= 25Ω
Fall Time2
tf
11
6.5
2
1.5
30
80
50
70
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = 2A, VGS = 0V
2
1.5
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IS = 2A, dlS/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
356
1.2
2Independent of operating temperature.
UNITS
V
nA
mA
Ω
S
pF
nC
nS
A
V
nS
mC
REV 1.0
2 2014/10/14


Part Number P0270ATF
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 6 Pages
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