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UNIKC
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P0320AL Datasheet Preview

P0320AL Datasheet

N-Channel Enhancement Mode MOSFET

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P0320AL pdf
P0320AL
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
200V
1.1Ω @VGS = 10V
ID
1A
SOT- 223
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±30
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
1
0.8
4
Avalanche Current
IAS 2
Avalanche Energy
L = 26.6mH
EAS
53
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2.5
1.6
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
TYPICAL
MAXIMUM UNITS
50 °C / W
Ver 1.0
1 2012/4/12



UNIKC
UNIKC

P0320AL Datasheet Preview

P0320AL Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

P0320AL pdf
P0320AL
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS
VGS = 0V, ID = 250mA
200
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250mA
2 3.2 4
Gate-Body Leakage
IGSS VDS = 0V, VGS = ±30V
±100
Zero Gate Voltage Drain Current
IDSS
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V , TJ = 55 °C
25
250
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 10V, ID = 0.5A
0.8 1.1
Forward Transconductance1
gfs
VDS = 5V, ID = 0.5A
1.5
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 25V, f = 1MHz
VDS = 160V
ID = 1A, VGS = 10V
VDS = 100V, ID @ 1A, VGS = 10V,
RGS = 25Ω
229
80
16
9
1.2
5.5
50
300
80
180
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 0.5A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 1 A, dl/dt = 100A / μS
119
325
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
1
1.6
UNIT
V
nA
mA
Ω
S
pF
nC
nS
A
V
nS
nC
Ver 1.0
2 2012/4/12


Part Number P0320AL
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 5 Pages
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