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P0403BT Datasheet Preview

P0403BT Datasheet

N-Channel Enhancement Mode MOSFET

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P0403BT pdf
P0403BT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 4mΩ @VGS = 10V
ID
112A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current2
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
112
71
200
Avalanche Current
IAS 44
Avalanche Energy
L = 0.5mH
EAS
486
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
83
33
Operating Junction & Storage Temperature Range
Lead Temperature ( 1/16" from case for 10 sec.)
TJ, TSTG
TL
-55 to 150
275
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
1.5
62.5
UNITS
°C / W
Ver 1.0
1 2012/4/16



UNIKC
UNIKC

P0403BT Datasheet Preview

P0403BT Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

P0403BT pdf
P0403BT
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
ID(ON)
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V , TJ = 125 °C
VDS = 10V, VGS = 10V
VGS = 4.5V, ID = 30A
VGS = 10V, ID = 45A
VDS = 20V, ID = 30A
30
1 1.7 3.0
±250
1
5
200
3.2 4.0
5.6 7.0
100
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
3950
979
Reverse Transfer Capacitance
Crss
626
Total Gate Charge2
Qg
82
Gate-Source Charge2
Qgs VDS = 15V, VGS = 10V, ID = 45A
22
Gate-Drain Charge2
Qgd
18
Turn-On Delay Time2
td(on)
13
Rise Time2
tr VDD = 15V,
36
Turn-Off Delay Time2
td(off)
ID @ 30A, VGS = 10V, RGEN = 3Ω
40
Fall Time2
tf
33
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 45A, VGS = 0V
Reverse Recovery Time
trr
42
Reverse Recovery Charge
Qrr
41
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
63
1.3
UNIT
V
nA
mA
A
mΩ
S
nF
nC
nS
A
V
nS
nC
Ver 1.0
2 2012/4/16


Part Number P0403BT
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 5 Pages
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