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UNIKC
UNIKC

P0420AD Datasheet Preview

P0420AD Datasheet

N-Channel Enhancement Mode MOSFET

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P0420AD pdf
P0420AI / P0420AD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
200V
0.7Ω @VGS = 10V
ID
4A
TO-251
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1 , 2
Avalanche Current
Avalanche Energy
Power Dissipation
TC = 25 °C
TC = 100 °C
L = 10mH
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
IAS
EAS
PD
200
±20
4
3
16
4
75
69
27
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
1Pulse width limited by maximum junction temperature.
2Limited by package.
SYMBOL
RqJC
TYPICAL
MAXIMUM UNITS
1.8 °C / W
Ver 1.1
1 2013-3-13



UNIKC
UNIKC

P0420AD Datasheet Preview

P0420AD Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

P0420AD pdf
P0420AI / P0420AD
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
LIMITS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS
VGS = 0V, ID = 250mA
200
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250mA
234
Gate-Body Leakage
IGSS VDS = 0V, VGS = ±20V
±100
Zero Gate Voltage Drain Current
IDSS
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V , TJ = 125 °C
1
10
Drain-Source On-State
FRoerswisatradncTera1 nsconductance1
RDS(ON)
gfs
VGS = 10V, ID = 2A
VDS = 10V, ID = 4A
0.5 0.7
10
DYNAMIC
Input Capacitance
Ciss
504
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
77
Reverse Transfer Capacitance
Crss
20
Total Gate Charge2
Qg
16
Gate-Source Charge2
Qgs VDS = 160V, ID = 4A, VGS = 10V
2
Gate-Drain Charge2
Qgd
6
Turn-On Delay Time2
td(on)
23
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = 100V, ID @ 4A, VGS = 10V
33
45
Fall Time2
tf
16
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF =4A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 4A, dlF/dt = 100A / mS
108
382
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
4
1.6
UNIT
V
nA
mA
Ω
S
pF
nC
nS
A
V
nS
nC
Ver 1.1
2 2013-3-13


Part Number P0420AD
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 6 Pages
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P0420AD pdf
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1 P0420AD N-Channel Enhancement Mode MOSFET UNIKC
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2 P0420AI N-Channel Enhancement Mode MOSFET UNIKC
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