http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf





UNIKC
UNIKC

P0425AI Datasheet Preview

P0425AI Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

P0425AI pdf
P0425AI
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
250V
0.8Ω @VGS = 10V
ID
4A
TO-251
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
4
3
16
Avalanche Current
IAS 4
Avalanche Energy
L = 7.7mH
EAS
60
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
69
27
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
1.8
50
UNITS
°C / W
Ver 1.0
1 2012/4/16



UNIKC
UNIKC

P0425AI Datasheet Preview

P0425AI Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

P0425AI pdf
P0425AI
N-Channel Enhancement Mode MOSFET
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS
VGS = 0V, ID = 250mA
250
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250mA
2 2.8 4
Gate-Body Leakage
IGSS VDS = 0V, VGS = ±20V
±100
Zero Gate Voltage Drain Current
IDSS
VDS = 250V, VGS = 0V
VDS = 200V, VGS = 0V , TJ = 125 °C
1
10
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 10V, ID = 2A
0.6 0.8
Forward Transconductance1
gfs
VDS = 10V, ID = 4A
10
DYNAMIC
Input Capacitance
Ciss
512
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
72
Reverse Transfer Capacitance
Crss
19
Total Gate Charge2
Qg
18
Gate-Source Charge2
Qgs VDD = 200V, ID = 4A, VGS = 10V
2
Gate-Drain Charge2
Qgd
8
Turn-On Delay Time2
td(on)
30
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = 125V, ID @ 2A,
VGS = 10V, RGS= 6Ω
210
61
Fall Time2
tf
105
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 2A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 4A, dlF/dt = 100A / mS
103
370
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
4
1.6
UNIT
V
nA
mA
Ω
S
pF
nC
nS
A
V
nS
nC
Ver 1.0
2 2012/4/16


Part Number P0425AI
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 5 Pages
PDF Download
P0425AI pdf
Download PDF File


Buy Electronic Components




Related Datasheet

1 P0425AD N-Channel Enhancement Mode MOSFET UNIKC
UNIKC
P0425AD pdf
2 P0425AI N-Channel Enhancement Mode MOSFET UNIKC
UNIKC
P0425AI pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components