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P0460AI Datasheet Preview

P0460AI Datasheet

N-Channel Enhancement Mode MOSFET

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P0460AI
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
2Ω @VGS = 10V
ID
4A
TO-251
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1,2
Avalanche Current3
TC = 25 °C
TC = 100 °C
ID
IDM
IAS
4
2.4
20
3
Avalanche Energy3
EAS 45
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
78
31
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
3VDD = 50V , L = 10mH ,starting TJ = 25˚C.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
1.6
62.5
UNITS
°C / W
REV 1.0
1 2014-3-5



UNIKC
UNIKC

P0460AI Datasheet Preview

P0460AI Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

P0460AI pdf
P0460AI
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS
Gate Threshold Voltage
VGS(th)
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
600
2.5 3.1 4.5
V
Gate-Body Leakage
IGSS VDS = 0V, VGS = ±30V
±100 nA
Gate Voltage Drain Current
IDSS
VDS = 600V, VGS = 0V , TC = 25 °C
VDS = 480V, VGS = 0V, TJ = 100°C
25
mA
250
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 10V, ID = 2A
VDS = 15V, ID = 2A
1.8 2
4
Ω
S
DYNAMIC
Input Capacitance
Ciss
695
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
78
Reverse Transfer Capacitance
Crss
12
Total Gate Charge2
Qg
19.2
Gate-Source Charge2
Qgs VDD = 480V, ID = 4A, VGS = 10V
4.3
Gate-Drain Charge2
Qgd
7.7
Turn-On Delay Time2
td(on)
23
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VGS = 0V , VDD = 300V,
ID = 4A, RG= 25Ω
28
44
Fall Time2
tf
44
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 4A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 4A, dlF/dt = 100A / μS
346
2.4
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
4
1.5
pF
nC
nS
A
V
nS
mC
REV 1.0
2 2014-3-5


Part Number P0460AI
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 5 Pages
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