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P0460ED Datasheet Preview

P0460ED Datasheet

N-Channel Enhancement Mode MOSFET

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P0460ED pdf
P0460ED
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
2.3Ω @VGS = 10V
ID
4A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current12
Avalanche Current3
TC = 25 °C
TC = 100 °C
ID
IDM
IAS
4
2.5
20
4
Avalanche Energy3
EAS 80
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
62.5
25
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
3VDD = 50V , L = 10mH ,starting TJ = 25˚ C.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
2
62.5
UNITS
°C / W
REV 1.1
1 2015/7/29



UNIKC
UNIKC

P0460ED Datasheet Preview

P0460ED Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

P0460ED pdf
P0460ED
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS
Gate Threshold Voltage
VGS(th)
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
600
2 3.2
4
V
Gate-Body Leakage
IGSS VDS = 0V, VGS = ±30V
±100 nA
Gate Voltage Drain Current
IDSS
VDS = 600V, VGS = 0V , TC = 25 °C
VDS = 480V, VGS = 0V , TC = 100 °C
1
mA
10
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 10V, ID = 2A
1.85 2.3
Ω
Forward Transconductance1
gfs
VDS = 15V, ID = 2A
5.8 S
DYNAMIC
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0V, VDS = 25V, f = 1MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge2
Qg
Gate-Source Charge2
Qgs VDD = 480V, ID = 4A, VGS = 10V
Gate-Drain Charge2
Qgd
Turn-On Delay Time2
td(on)
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VGS = 10V , VDD = 300V,
ID = 4A, RG = 25Ω
Fall Time2
tf
517
62 pF
11
18
2.8 nC
8.3
18
46
nS
46
50
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 4A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 4A, dlF/dt = 100A / mS
383
2.2
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
4
1.5
A
V
nS
uC
REV 1.1
2 2015/7/29


Part Number P0460ED
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 8 Pages
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P0460ED pdf
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