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UNIKC
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P0465CS Datasheet Preview

P0465CS Datasheet

N-Channel Enhancement Mode MOSFET

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P0465CS pdf
P0465CS
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
650V
2.6mΩ @VGS = 10V
ID
4A
TO-263
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 650
Gate-Source Voltage
VGS ±30
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current2
TC= 25 °C
TC= 100 °C
ID
IDM
IAS
4
2.5
15
2
Avalanche Energy2
EAS 20
Power Dissipation
TC= 25 °C
TC= 100°C
PD
71
28
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
1Pulse width limited by maximum junction temperature.
2 VDD=50V ,L=10mH,Starting Tj =25 °C.
SYMBOL
RqJC
TYPICAL
MAXIMUM UNITS
1.75 °C / W
REV 1.0
1 2014-3-20



UNIKC
UNIKC

P0465CS Datasheet Preview

P0465CS Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

P0465CS pdf
P0465CS
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±30V
VDS = 650V, VGS = 0V
VDS =520V, VGS = 0V, TJ = 125°C
VGS = 10V, ID = 2A
VDS =10V, ID =2A
650
2.5 3.3 4.5
V
±100 nA
1
mA
10
2.1 2.6
2.7 S
DYNAMIC
Input Capacitance
Ciss
527
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
49
Reverse Transfer Capacitance
Crss
12
Total Gate Charge2
Qg
11
Gate-Source Charge2
Qgs VGS = 10V , VDS = 520V , ID = 4A
3.3
Gate-Drain Charge2
Qgd
4.4
Turn-On Delay Time2
td(on)
28
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = 325V,
ID @ 4A, VGS = 10V, RGS = 6Ω
60
91
Fall Time2
tf
75
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 4A, VGS = 0V
4
1
pF
nC
nS
A
V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 4A, dlF/dt = 100A / μS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
367 nS
2.1 mC
REV 1.0
2 2014-3-20


Part Number P0465CS
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 5 Pages
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