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P0550BD Datasheet Preview

P0550BD Datasheet

N-Channel Enhancement Mode MOSFET

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P0550BD pdf
P0550BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
500V
1.75Ω @VGS = 10V
ID
4.5A
TO-252
100% UIS tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 500
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1 , 2
Avalanche Energy3
TC = 25 °C
TC = 100 °C
ID
IDM
EAS
4.5
3
15
31
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
52
20
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
3VDD = 50V, L = 10mH, starting TJ = 25°C.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
2.4
62.5
UNITS
°C / W
Ver 1.1
1 2013-3-14



UNIKC
UNIKC

P0550BD Datasheet Preview

P0550BD Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

P0550BD pdf
P0550BD
N-Channel Enhancement Mode MOSFET
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±30V
500
2.5
4.5
±100
Gate Voltage Drain Current
IDSS
VDS = 500V, VGS = 0V , TC = 25 °C
VDS = 400V, VGS = 0V , TC = 100 °C
25
250
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 10V, ID = 2.25A
1.75
Forward Transconductance1
gfs
VDS = 10V, ID = 2.25A
4
DYNAMIC
Input Capacitance
Ciss
691
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
93
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDD = 400V, ID = 4.5A, VGS = 10V
VDD = 250V, ID = 4.5A, RG = 25Ω
12
12.1
3.7
3.6
13
22
28
20
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 4.5A, VGS = 0V
4.5
1.5
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 4.5A, dlF/dt = 100A / ms
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
1450
10
2Independent of operating temperature.
3Limited only by maximum temperature allowed.
UNIT
V
nA
mA
Ω
S
pF
nC
nS
A
V
nS
uC
Ver 1.1
2 2013-3-14


Part Number P0550BD
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 5 Pages
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