http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf





UNIKC
UNIKC

PE636BA Datasheet Preview

PE636BA Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

PE636BA pdf
PE636BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 9mΩ @VGS = 10V
ID
33A
PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Tc = 25 °C
33
Continuous Drain Current3
Tc = 100 °C
TA = 25 °C
ID
21
10
Pulsed Drain Current1
TA= 70 °C
IDM
8
100
Avalanche Current
IAS 20
Avalanche Energy
L =0.1mH
EAS
20
TC = 25 °C
17.8
Power Dissipation
TC = 100 °C
TA = 25 °C
PD
7
1.7
TA = 70 °C
1
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
75
Junction-to-Case
RqJC
7
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3Package limitation current is 13A
UNITS
°C / W
REV 1.0
1 2015/5/29



UNIKC
UNIKC

PE636BA Datasheet Preview

PE636BA Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

PE636BA pdf
PE636BA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = 250mA
30
V
VDS = VGS, ID = 250mA
1.3 1.8 2.3
VDS = 0V, VGS = ±20V
±100 nA
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 55 °C
1
mA
10
VGS = 4.5V, ID = 10A
VGS = 10V , ID = 10A
9.9 12
7.4 9
VDS = 10V, ID = 10A
34 S
DYNAMIC
Input Capacitance
Ciss
774
Output Capacitance
Coss VGS = 0V, VDS = 15V, f = 1MHz 139 pF
Reverse Transfer Capacitance
Crss
81
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz 3.1 Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 15V , ID = 10A
VDD= 15V,
ID @ 10A, VGEN = 10V, RG= 6Ω
15.5
8.3
2.2
4.4
23
20
40
20
nC
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 10A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 10A, dlF/dt = 100A / mS
9.5
1.4
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Package limitation current is 13A.
14.8
1.2
A
V
nS
nC
REV 1.0
2 2015/5/29


Part Number PE636BA
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 5 Pages
PDF Download
PE636BA pdf
Download PDF File
PE636BA pdf
View for Mobile



Buy Electronic Components




Related Datasheet

1 PE636BA N-Channel Enhancement Mode MOSFET UNIKC
UNIKC
PE636BA pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components