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2SB1116 Datasheet Preview

2SB1116 Datasheet

PNP EPITAXIAL SILICON TRANSISTOR

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2SB1116 pdf
UTC2SB1116/A PNP EPITAXIAL SILICON TRANSISTOR
PNP EPITAXIAL SILICON
TRANSISTOR
DESCRIPTION
* Complement to 2SD1616/A
APPLICATIONS
* Audio Frequency Power Amplifier
* Medium Speed Switching
1
TO-92
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
SYMBOL
Collector-Base Voltage
2SB1116
2SB1116A
VCBO
Collector-Emitter Voltage
2SB1116
2SB1116A
VwCwEwO.DataSheet4U.com
Emitter-Base Voltage
VEBO
Collector Current (DC)
Ic
Collector Current (Pulse)*
Icp
Collector Power Dissipation
Pc
Junction Temperature
Tj
Storage Temperature
Tstg
*PW10ms,Duty Cycle50%
1: Emitter 2: Collector 3: Base
RATINGS
-60
-80
-50
-60
-6
-1
-2
0.75
150
-55 ~ +150
UNIT
V
V
V
A
A
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C)
PARAMETER
SYMBOL TEST CONDITIONS
Collector Cut-off Current
ICBO VCB=-60V,IE=0
Emitter Cut-off current
IEBO VEB=-6V,Ic=0
DC Current Gain*
2SB1116
2SB1116A
hFE1
VCE=-2V,Ic=-100mA
hFE2 VCE=-2V,Ic=-1A
Base-Emitter On Voltage*
VBE(on) VCE=-2V,Ic=-50mA
Collector-Emitter Saturation Voltage* VCE(sat) Ic=-1A,IB=-50mA
Base-Emitter Saturation Voltage*
VBE(sat) Ic=-1A,IB=-50mA
Output Capacitance
Cob VCB=-10V,IE=0,f=1MHz
Current Gain Bandwidth Product
fT VCE=-2V,Ic=-100mA
Turn On Time
Storage Time
Fall Time
tON Vcc=-10V,Ic=-100mA
tSTG IB1=-IB2=-10mA
tF VBE(off)=2 ~ 3V
*Pulse Test: PW350µs, Duty Cycle2%
MIN
135
135
81
-600
70
TYP
-650
-0.2
-0.9
25
120
0.07
0.7
0.07
MAX
-100
-100
UNIT
nA
nA
600
400
-700
-0.3
-1.2
mV
V
V
pF
MHz
μs
μs
μs
UTC UNISONIC TECHNOLOGIES CO., LTD. 1
QW-R201-066,A



UTC
UTC

2SB1116 Datasheet Preview

2SB1116 Datasheet

PNP EPITAXIAL SILICON TRANSISTOR

No Preview Available !

2SB1116 pdf
UTC2SB1116/A PNP EPITAXIAL SILICON TRANSISTOR
CLASSIFICATION of hFE1
RANK
Y
hFE1
135 ~ 270
G
200 ~ 400
L
300 600
TYPICAL CHARACTERISTICS
-100
IB=-250μA
-80
-60
-40
-20
Static Characteristic
IB=-200μA
IB=-150μA
IB=-100μA
IB=-50μA
0
0 -2 -4 -6 -8
Collector-Emitter Voltage, VCE (V)
-10
1000
100
DC Current Gain
VCE=-2V
10
1
-0.01
-0.1 -1
Collector Current, Ic (mA)
-10
-1.0
-0.8
-0.6
-0.4
-0.2
Static Characteristic
IB=-5.0mA
IB=-4.5mA
IB=-4.0mA
IB=-3.5mA
IB=-3.0mA
IB=-2.5mA
IB=-2.0mA
IB=-1.5mA
IB=-1.0mA
IB=-0.5mA
0.0
0.0
-0.2 -0.4 -0.6 -0.8
Collector-Emitter Voltage, VCE (V)
-1.0
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
-10
Ic=20IB
-1 VBE(sat)
-0.1
-0.01
-0.01
VCE(sat)
-0.1 -1
Collector Current, Ic (A)
-10
UTC
UNISONIC TECHNOLOGIES CO., LTD. 2
QW-R201-066,A


Part Number 2SB1116
Description PNP EPITAXIAL SILICON TRANSISTOR
Maker UTC
Total Page 4 Pages
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