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BC807 Datasheet Preview

BC807 Datasheet

PNP SILICON TRANSISTOR

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BC807 pdf
UNISONIC TECHNOLOGIES CO., LTD
BC807/BC808
PNP SILICON TRANSISTOR
SWITCHING AND AMPLIFIER
APPLICATIONS
FEATURES
* Suitable for AF-Driver stages and low power output stages
* Complement to BC817 / BC818
ORDERING INFORMATION
Ordering Number
Package
Note:
BC807G-xx-AE3-R
BC807G-xx-AL3-R
BC808G-xx-AE3-R
BC808G-xx-AL3-R
Pin Assignment: C: Collector B: Base
SOT-23
SOT-323
SOT-23
SOT-323
E: Emitter
Pin Assignment
123
EBC
EBC
EBC
EBC
Packing
Tape Reel
Tape Reel
Tape Reel
Tape Reel
MARKING
807-16
808-16
9GAG
807-25
808-25
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
807-40
808-40
1 of 4
QW-R206-026.F



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BC807 Datasheet Preview

BC807 Datasheet

PNP SILICON TRANSISTOR

No Preview Available !

BC807 pdf
BC807/BC808
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage
BC807
BC808
VCES
-50 V
-30 V
Collector-Emitter Voltage
BC807
BC808
VCEO
-45 V
-25 V
Emitter-Base Voltage
VEBO
-5 V
Collector Current (DC)
IC
-800
mA
Collector Dissipation
PC 310 mW
Junction Temperature
TJ
+150
C
Storage Temperature
TSTG
-65 ~ +150
C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
BC807
Collector-Emitter Breakdown Voltage
BC808
BVCEO IC=-10mA, IB=0
-45
-25
V
V
BC807
Collector-Emitter Breakdown Voltage
BC808
BVCES IC=-0.1mA, VBE=0
-50
-30
V
V
Emitter-Base Breakdown Voltage
BVEBO IE=-0.1mA, IC=0
-5
V
Collector Cut-OFF Current
ICES VCE=-25V, VBE=0
-100 nA
Emitter Cut-OFF Current
IEBO VEB=-4V, IC=0
-100 nA
DC Current Gain
hFE1 IC=-100mA, VCE=-1V
hFE2 IC=-300mA, VCE=-1V
100
60
630
Collector-Emitter Saturation Voltage
VCE(SAT) IC=-500mA, IB=-50mA
-0.7 V
Base-Emitter ON Voltage
VBE(ON) IC=-300mA, VCE=-1V
-1.2 V
Current Gain Bandwidth Product
fT VCE=-5V, IC=-10mA, f=50MHz 100 MHz
Output Capacitance
Cob VCB=-10V, f=1MHz
12 pF
CLASSIFICATION OF hFE
RANK
hFE1
hFE2
16
100-250
60-
25
160-400
100-
40
250-630
170-
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R206-026.F


Part Number BC807
Description PNP SILICON TRANSISTOR
Maker UTC
Total Page 4 Pages
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BC807 pdf
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