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MMBT1616 Datasheet Preview

MMBT1616 Datasheet

NPN EPITAXIAL SILICON TRANSISTOR

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MMBT1616 pdf
UNISONIC TECHNOLOGIES CO., LTD
MMBT1616/A
NPN SILICON TRANSISTOR
NPN EPITAXIAL SILICON
TRANSISTOR
DESCRIPTION
* Audio frequency power amplifier
* Medium speed switching
3
1
2
SOT-23
*Pb-free plating product number:
MMBT1616L/MMBT16AL
ORDERING INFORMATION
www.DataSheet4U.com
Order Number
Normal
Lead Free Plating
MMBT1616-x-AE3-R
MMBT1616L-x-AE3-R
MMBT1616A-x-AE3-R MMBT1616AL-x-AE3-R
Package
SOT-23
SOT-23
Pin Assignment
123
EBC
EBC
Packing
Tape Reel
Tape Reel
MMBT1616L-x-AE3-R
(1)Packing Type
(2)Package Type
(3)Rank
(4)Lead Plating
(1) R: Tape Reel
(2) AE3: SOT-23
(3) x: refer to Classification of hFE1
(4) L: Lead Free Plating, Blank: Pb/Sn
MARKING
UTC MMBT1616
UTC MMBT1616A
16 Lead Plating
16A
Lead Plating
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
1 of 4
QW-R206-036.B



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UTC

MMBT1616 Datasheet Preview

MMBT1616 Datasheet

NPN EPITAXIAL SILICON TRANSISTOR

No Preview Available !

MMBT1616 pdf
MMBT1616/A
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
1616
1616A
VCBO
60
120
V
V
Collector-Emitter Voltage
1616
1616A
VCEO
50
60
V
V
Emitter to Base Voltage
VEBO
6
V
Collector Current
DC IC 1 A
Pulse*
IC
2
A
Total Power Dissipation (Ta=25 )
PC 350 mW
Junction Temperature
TJ +150
Storage Temperature
Note (*) Pulse width10ms, Duty cycle<50%
TSTG
-55 ~ +150
1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25 )
PARAMETER
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base Emitter On Voltage
SYMBOL
ICBO
IEBO
VCE(SAT)
VBE(SAT)
VBE(ON)
TEST CONDITIONS
VCB=60V
VEB= 6V
IC=1A, IB=50mA
IC=1A, IB=50mA
VCE=2V, IC=50mA
DC Current Gain
Current Gain Bandwidth Product
Output Capacitance
Turn On Time
Storage Time
Fall Time
hFE1
hFE2
fT
Cob
tON
tS
tF
VCE=2V, IC=100mA
VCE=2V, IC=1A
VCE=2V, IC=100mA
VCB=10V, f=1MHz
VCE=10V, IC=100mA
IB1=-IB2=10mA
VBE(OFF)=-2 ~ -3V
CLASSIFICATION OF hFE1
RANK
hFE1
Y
135-270
G
200-400
MIN TYP MAX UNIT
100 nA
100 nA
0.15 0.3
V
0.9 1.2
V
600 640 700 mV
135 600
135 400
81
100 160
MHz
19 pF
0.07 us
0.95 us
0.07 us
L
300-600
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R206-036.B


Part Number MMBT1616
Description NPN EPITAXIAL SILICON TRANSISTOR
Maker UTC
Total Page 4 Pages
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