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Vishay Intertechnology Electronic Components Datasheet

BZT52C2V7 Datasheet

Small Signal Zener Diodes

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BZT52C2V7 pdf
www.vishay.com
BZT52-Series
Vishay Semiconductors
Small Signal Zener Diodes
PRIMARY CHARACTERISTICS
PARAMETER
VALUE
VZ range nom.
Test current IZT
VZ specification
Int. construction
2.4 to 75
2.5; 5
Pulse current
Single
UNIT
V
mA
FEATURES
• Silicon planar Zener diodes
• The Zener voltages are graded according to the
international E24 standard
• AEC-Q101 qualified
• ESD capability according to AEC-Q101:
Human body model > 8 kV
Machine model > 800 V
• Base P/N-E3 - RoHS-compliant, commercial grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
BZT52C2V4-E3-08 to BZT52C75-E3-08
BZT52B2V4-E3-08 to BZT52B75-E3-08
BZT52C2V4-HE3-08 to BZT52C75-HE3-08
BZT52-series
BZT52B2V4-HE3-08 to BZT52B75-HE3-08
BZT52C2V4-E3-18 to BZT52C75-E3-18
BZT52B2V4-E3-18 to BZT52B75-E3-18
BZT52C2V4-HE3-18 to BZT52C75-HE3-18
BZT52B2V4-HE3-18 to BZT52B75-HE3-18
TAPED UNITS PER REEL MINIMUM ORDER QUANTITY
3000 (8 mm tape on 7" reel)
15 000/box
10 000 (8 mm tape on 13" reel)
10 000/box
PACKAGE
PACKAGE NAME
SOD-123
WEIGHT
10.3 mg
MOLDING COMPOUND
FLAMMABILITY RATING
UL 94 V-0
MOISTURE SENSITIVITY
LEVEL
MSL level 1
(according J-STD-020)
SOLDERING CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Power dissipation
Diode on ceramic substrate 0.7 mm; 5 mm2
pad areas
Diode on ceramic substrate 0.7 mm; 2.5 mm2
pad areas
Ptot
Ptot
Zener current
See table “Electrical Characteristics “
Thermal resistance junction to ambient air
Valid provided that electrodes are kept at
ambient temperature
RthJA
Junction temperature
Tj
Storage temperature range
Tstg
Operating temperature range
Top
VALUE
500
410
300
150
- 65 to + 150
- 55 to + 150
UNIT
mW
mW
K/W
°C
°C
°C
Rev. 1.8, 26-Feb-13
1 Document Number: 85760
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

BZT52C2V7 Datasheet

Small Signal Zener Diodes

No Preview Available !

BZT52C2V7 pdf
www.vishay.com
BZT52-Series
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
ZENER VOLTAGE
TEST
REVERSE
RANGE (1)
CURRENT VOLTAGE
DYNAMIC
RESISTANCE
TEMP.
COEFFICIENT
ADMISSABLE
ZENER
CURRENT (4)
PART NUMBER
MARKING
CODE
VZ at IZT1
IZ at
IZ at
IZT1 IZT2 VR at IR ZZ at IZT1 ZZK at IZT2 VZ Tamb = Tamb =
45 °C 25 °C
V
mA V nA
10-4/°C
mA
MIN. NOM. MAX.
BZT52C2V4
W1 2.2 2.4 2.6 5 1 - -
85
600 - 9 to - 4 -
-
BZT52C2V7
W2 2.5 2.7 2.9 5 1 - - 75 (< 83) < 500 - 9 to - 4 113 134
BZT52C3V0
W3 2.8 3.0 3.2 5 1 - - 80 (< 95) < 500 - 9 to - 3 98 118
BZT52C3V3
W4 3.1 3.3 3.5 5 1 - - 80 (< 95) < 500 - 8 to - 3 92 109
BZT52C3V6
W5 3.4 3.6 3.8 5 1 - - 80 (< 95) < 500 - 8 to - 3 85 100
BZT52C3V9
W6
3.7 3.9 4.1 5 1 - - 80 (< 95) < 500
- 7 to - 3
77
92
BZT52C4V3
W7
4 4.3 4.6 5 1 - - 80 (< 95) < 500
- 6 to - 1
71
84
BZT52C4V7
W8 4.4 4.7 5 5 1 - - 70 (< 78) < 500 - 5 to + 2 64 76
BZT52C5V1
W9
4.8 5.1 5.4 5 1 > 0.8 100 30 (< 60) < 480
- 3 to + 4
56
67
BZT52C5V6
WA
5.2 5.6 6
5 1 > 1 100 10 (< 40) < 400
- 2 to + 6
50
59
BZT52C6V2
WB
5.8 6.2 6.6 5 1 > 2 100 4.8 (< 10) < 200
- 1 to + 7
45
54
BZT52C6V8
WC
6.4 6.8 7.2 5 1 > 3 100 4.5 (< 8) < 150
+ 2 to + 7
41
49
BZT52C7V5
WD
7 7.5 7.9 5 1 > 5 100 4 (< 7)
< 50
+ 3 to + 7
37
44
BZT52C8V2
WE
7.7 8.2 8.7 5 1 > 6 100 4.5 (< 7)
< 50
+ 4 to + 7
34
40
BZT52C9V1
WF
8.5 9.1 9.6 5 1 > 7 100 4.8 (< 10) < 50
+ 5 to + 8
30
36
BZT52C10
WG
9.4 10 10.6 5 1 > 7.5 100 5.2 (< 15) < 70
+ 5 to + 8
28
33
BZT52C11
WH 10.4 11 11.6 5 1 > 8.5 100 6 (< 20)
< 70
+ 5 to + 9
25
30
BZT52C12
WI
11.4 12 12.7 5 1 > 9 100 7 (< 20)
< 90
+ 6 to + 9
23
28
BZT52C13
WK 12.4 13 14.1 5 1 > 10 100 9 (< 25) < 110 + 7 to + 9 21
25
BZT52C15
WL 13.8 15 15.6 5 1 > 11 100 11 (< 30) < 110 + 7 to + 9 19
23
BZT52C16
WM 15.3 16 17.1 5 1 > 12 100 13 (< 40) < 170 + 8 to + 9.5 17
20
BZT52C18
WN 16.8 18 19.1 5 1 > 14 100 18 (< 50) < 170 + 8 to + 9.5 15
18
BZT52C20
WO 18.8 20 21.2 5 1 > 15 100 20 (< 50) < 220 + 8 to + 10 14
17
BZT52C22
WP 20.8 22 23.3 5 1 > 17 100 25 (< 55) < 220 + 8 to + 10 13
16
BZT52C24
WR 22.8 24 25.6 5 1 > 18 100 28 (< 80) < 220 + 8 to + 10 11
13
BZT52C27
WS 25.1 27 28.9 5 1 > 20 100 30 (< 80) < 250 + 8 to + 10 10
12
BZT52C30
WT
28 30 32 5 1 > 22.5 100 35 (< 80) < 250 + 8 to + 10
9
10
BZT52C33
WU
31 33 35 5 1 > 25 100 40 (< 80) < 250 + 8 to + 10
8
9
BZT52C36
WW
34 36 38 5 1 > 27 100 40 (< 90) < 250 + 8 to + 10
8
9
BZT52C39
WX 37 39 41 5 1 > 29 100 50 (< 90) < 300 + 10 to + 12 7
8
BZT52C43
WY 40 43 46 5 1 > 32 100 60 (< 100) < 700 + 10 to + 12 6
7
BZT52C47
WZ 44 47 50 5 1 > 35 100 70 (< 100) < 750 + 10 to + 12 5
6
BZT52C51
X1 48 51 54 5 1 > 38 100 70 (< 100) < 750 + 10 to + 12 5
6
BZT52C56
X2
52 56 60 2.5 0.5 -
- < 135 (2) < 1000 (3) typ. +10 (2)
-
-
BZT52C62
X3
58 62 66 2.5 0.5 -
- < 150 (2) < 1000 (3) typ. +10 (2)
-
-
BZT52C68
X4
64 68 72 2.5 0.5 -
- < 200 (2) < 1000 (3) typ. +10 (2)
-
-
BZT52C75
X5
70 75 79 2.5 0.5 -
- < 250 (2) < 1500 (3) typ. +10 (2)
-
-
Notes
• IZT1 = 5 mA, IZT2 = 1 mA
(1) Measured with pulses tp = 5 ms
(2) IZT1 = 2.5 mA
(3) IZT2 = 0.5 mA
(4) Valid provided that electrodes are kept at ambient temperature
Rev. 1.8, 26-Feb-13
2 Document Number: 85760
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number BZT52C2V7
Description Small Signal Zener Diodes
Maker Vishay
Total Page 8 Pages
PDF Download
BZT52C2V7 pdf
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