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Vishay Intertechnology Electronic Components Datasheet

G16N50C Datasheet

SIHG16N50C

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G16N50C pdf
Power MOSFET
SiHG16N50C
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
560 V
VGS = 10 V
68
17.6
21.8
Single
TO-247AC
0.38
D
FEATURES
• Low Figure-of-Merit Ron x Qg
• 100 % Avalanche Tested
• Gate Charge Improved
• Trr/Qrr Improved
• Compliant to RoHS Directive 2002/95/EC
S
D
G
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
TO-247AC
SiHG16N50C-E3
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)a
Pulsed Drain Currentc
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Linear Derating Factor
Single Pulse Avalanche Energyb
EAS
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d
for 10 s
TJ, Tstg
Notes
a. Limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 2.5 mH, Rg = 25 Ω, IAS = 16 A.
c. Repetitive rating; pulse width limited by maximum junction temperature.
d. 1.6 mm from case.
LIMIT
500
± 30
16
10
40
2
320
250
- 55 to + 150
300
UNIT
V
A
W/°C
mJ
W
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91418
S10-1355-Rev. A, 14-Jun-10
www.vishay.com
1
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Vishay Intertechnology Electronic Components Datasheet

G16N50C Datasheet

SIHG16N50C

No Preview Available !

G16N50C pdf
SiHG16N50C
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
RthJA
RthJC
TYP.
-
-
MAX.
40
0.5
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
VDS
ΔVDS/TJ
VGS(th)
IGSS
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 30 V
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductancea
Dynamic
IDSS
RDS(on)
gfs
VDS = 500 V, VGS = 0 V
VDS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 8 A
VDS = 50 V, ID = 3 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Input Resistance
Drain-Source Body Diode Characteristics
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Rg
VGS = 10 V
ID = 16 A, VDS = 400 V
VDD = 250 V, ID = 16 A,
Rg = 9.1 Ω, VGS = 10 V
f = 1 MHz, open drain
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
Pulsed Diode Forward Current
ISM p - n junction diode
D
G
S
MIN.
500
-
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
0.6
-
-
-
-
0.317
3
1900
230
24
45
18
22
27
156
29
31
1.6
-
-
MAX.
-
-
5.0
± 100
50
250
0.38
-
-
-
-
68
-
-
-
-
-
-
-
16
30
UNIT
V
V/°C
V
nA
μA
Ω
S
pF
nC
ns
Ω
A
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Current
VSD
trr
Qrr
IRRM
TJ = 25 °C, IS = 10 A, VGS = 0 V
TJ = 25 °C, IF = IS, dI/dt = 100 A/μs,
VR = 20 V
- - 1.8 V
- 555 -
ns
- 5.5 - μC
- 18 -
A
Note
• The information shown here is a preliminary product proposal, not a commercial product data sheet. Vishay Siliconix is not committed to
produce this or any similar product. This information should not be used for design purposes, nor construed as an offer to furnish or sell
such products.
www.vishay.com
2
Document Number: 91418
S10-1355-Rev. A, 14-Jun-10
Free Datasheet http://www.0PDF.com


Part Number G16N50C
Description SIHG16N50C
Maker Vishay
Total Page 7 Pages
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