http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




Vishay Intertechnology Electronic Components Datasheet

IRF610L Datasheet

Power MOSFET

No Preview Available !

IRF610L pdf
www.vishay.com
IRF610S, SiHF610S, IRF610L, SiHF610L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
200
VGS = 10 V
8.2
1.8
4.5
Single
1.5
I2PAK (TO-262)
D2PAK (TO-263)
D
G
DS
G
D
S
G
S
N-Channel MOSFET
FEATURES
• Surface mount
• Available in tape and reel
• Dynamic dV/dt rating
• Repetitive avalanche rated
Available
• Fast switching
• Ease of paralleling
Available
• Simple drive requirements
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D2PAK (TO-263) is a surface mount power package
capable of accommodating die sizes up to HEX-4. It
provides the highest power capability and the lowest
possible on-resistance in any existing surface mount
package. The D2PAK (TO-263) is suitable for high current
applications because of its low internal connection
resistance and can dissipate up to 2.0 W in a typical surface
mount application.
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
Lead (Pb)-free
Note
a. See device orientation.
D2PAK (TO-263)
SiHF610S-GE3
IRF610SPbF
D2PAK (TO-263)
SiHF610STRL-GE3 a
IRF610STRLPbF a
D2PAK (TO-263)
SiHF610STRR-GE3 a
IRF610STRRPbF a
I2PAK (TO-262)
SiHF610L-GE3 a
IRF610LPbF a
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Current a
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Linear Derating Factor
Linear Derating Factor (PCB mount) e
Single Pulse Avalanche Energy b
Repetitive Avalanche Current a
Repetitive Avalanche Energy a
EAS
IAR
EAR
Maximum Power Dissipation
Maximum Power Dissipation (PCB mount) e
Peak Diode Recovery dV/dt c
TC = 25 °C
TA = 25 °C
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature) d
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 8.8 mH, Rg = 25 , IAS = 3.3 A (see fig. 12).
c. ISD 3.3 A, dI/dt 70 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
LIMIT
200
± 20
3.3
2.1
10
0.29
0.025
64
3.3
3.6
36
3.0
5.0
-55 to +150
300
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
S15-1659-Rev. D, 20-Jul-15
1
Document Number: 91024
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

IRF610L Datasheet

Power MOSFET

No Preview Available !

IRF610L pdf
www.vishay.com
IRF610S, SiHF610S, IRF610L, SiHF610L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
(PCB mount) c
RthJA
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
RthJA
RthJC
MIN.
-
-
-
TYP.
-
-
-
MAX.
40
62
3.5
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Static
VGS = 0, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 200 V, VGS = 0 V
VDS = 160V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 2.0 A b
VDS = 50 V, ID = 2.0 A b
Dynamic
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 3.3 A, VDS = 160 V
see fig. 6 and 13 b
VDD = 100 V, ID = 3.3 A,
Rg = 24 , RD = 30 
see fig. 10 b
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
6 mm (0.25") from
package and center of
G
LS die contact
Drain-Source Body Diode Characteristics
D
S
MIN.
200
-
2.0
-
-
-
-
0.80
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
- -V
0.30 - V/°C
- 4.0 V
- ± 100 nA
- 25
μA
- 250
- 1.5
- -S
140 -
53 - pF
15 -
- 8.2
- 1.8 nC
- 4.5
8.2 -
17 -
ns
14 -
8.9 -
4.5 -
nH
7.5 -
Continuous Source-Drain Diode Current IS MOSFET symbol
D - - 3.3
showing the
integral reverse
G
A
Pulsed Diode Forward Current a
ISM p - n junction diode
S - - 10
Body Diode Voltage
VSD TJ = 25 °C, IS = 3.3 A, VGS = 0 V b - - 2.0 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
Qrr
TJ = 25 °C, IF = 3.3 A,
dI/dt = 100 A/μs b
- 150 310 ns
- 0.60 1.4 μC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. When mounted on 1" square PCB (FR-4 or G-10 material).
S15-1659-Rev. D, 20-Jul-15
2
Document Number: 91024
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number IRF610L
Description Power MOSFET
Maker Vishay
Total Page 8 Pages
PDF Download
IRF610L pdf
Download PDF File
IRF610L pdf
View for Mobile



Buy Electronic Components




Related Datasheet

1 IRF610 N-Channel Mosfet Transistor Inchange Semiconductor
Inchange Semiconductor
IRF610 pdf
2 IRF610 3.3A/ 200V/ 1.500 Ohm/ N-Channel Power MOSFET Intersil Corporation
Intersil Corporation
IRF610 pdf
3 IRF610 N-Channel Power MOSFETs/ 3.5A/ 150-200V Fairchild Semiconductor
Fairchild Semiconductor
IRF610 pdf
4 IRF610 Trans MOSFET N-CH 200V 3.3A 3-Pin(3+Tab) TO-220AB New Jersey Semiconductor
New Jersey Semiconductor
IRF610 pdf
5 IRF610 Power MOSFET Vishay
Vishay
IRF610 pdf
6 IRF6100 HEXFET Power MOSFET International Rectifier
International Rectifier
IRF6100 pdf
7 IRF6100PBF HEXFET Power MOSFET International Rectifier
International Rectifier
IRF6100PBF pdf
8 IRF610A N-Channel Mosfet Transistor Inchange Semiconductor
Inchange Semiconductor
IRF610A pdf
9 IRF610A Advanced Power MOSFET Fairchild Semiconductor
Fairchild Semiconductor
IRF610A pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components