http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




Vishay Intertechnology Electronic Components Datasheet

IRF630S Datasheet

Power MOSFET

No Preview Available !

IRF630S pdf
Power MOSFET
IRF630S, SiHF630S
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
200
VGS = 10 V
43
7.0
23
Single
0.40
D2PAK (TO-263)
K
DS
G
D
G
S
N-Channel MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D2PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application.
ORDERING INFORMATION
Package
D2PAK (TO-263)
D2PAK (TO-263)
Lead (Pb)-free and Halogen-free
SiHF630S-GE3
SiHF630STRL-GE3a
Lead (Pb)-free
IRF630SPbF
SiHF630S-E3
IRF630STRLPbFa
SiHF630STL-E3a
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain Current
TC = 25 °C
VGS at 10 V
TC = 100 °C
ID
Pulsed Drain Currenta
IDM
Linear Derating Factor
Linear Derating Factor (PCB Mount)e
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
TC = 25 °C
Maximum Power Dissipation (PCB Mount)e
TA = 25 °C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Peak Diode Recovery dV/dtc
EAS
IAR
EAR
PD
dV/dt
D2PAK (TO-263)
SiHF630STRR-GE3a
IRF630STRRPbFa
SiHF630STR-E3a
LIMIT
200
± 20
9.0
5.7
36
0.59
0.025
250
9.0
7.4
74
3.0
5.0
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
Document Number: 91032
S11-1047-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

IRF630S Datasheet

Power MOSFET

No Preview Available !

IRF630S pdf
IRF630S, SiHF630S
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 4.6 mH, Rg = 25 , IAS = 9.0 A (see fig. 12).
c. ISD 9.0 A, dI/dt 120 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
.
LIMIT
- 55 to + 150
300d
UNIT
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
(PCB Mount)c
RthJA
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
RthJA
RthJC
MIN.
-
-
-
TYP.
-
-
-
MAX.
40
62
1.7
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 200 V, VGS = 0 V
VDS = 160V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 5.4 Ab
VDS = 50 V, ID = 5.4 Ab
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 5.9 A, VDS = 160 V
see fig. 6 and 13b
VDD = 100 V, ID = 5.9 A
Rg = 12 , RD= 16
see fig. 10b
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
6 mm (0.25") from
D
package and center of
G
LS die contact
S
MIN.
200
-
2.0
-
-
-
-
3.8
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
- -V
0.24 - V/°C
- 4.0 V
- ± 100 nA
- 25
μA
- 250
- 0.40
- -S
800 -
240 - pF
76 -
- 43
- 7.0 nC
- 23
9.4 -
28 -
ns
39 -
20 -
4.5 -
nH
7.5 -
www.vishay.com
2
Document Number: 91032
S11-1047-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number IRF630S
Description Power MOSFET
Maker Vishay
Total Page 9 Pages
PDF Download
IRF630S pdf
Download PDF File
IRF630S pdf
View for Mobile



Buy Electronic Components




Related Datasheet

1 IRF630 200V/9A POWER MOSFET TAITRON
TAITRON
IRF630 pdf
2 IRF630 N-channel TrenchMOS transistor NXP
NXP
IRF630 pdf
3 IRF630 N-CHANNEL MOSFET STMicroelectronics
STMicroelectronics
IRF630 pdf
4 IRF630 9A/ 200V/ 0.400 Ohm/ N-Channel Power MOSFETs Intersil Corporation
Intersil Corporation
IRF630 pdf
5 IRF630 Power MOSFET(Vdss=200V/ Rds(on)=0.40ohm/ Id=9.0A) International Rectifier
International Rectifier
IRF630 pdf
6 IRF630 N-Channel Power MOSFETs Fairchild Semiconductor
Fairchild Semiconductor
IRF630 pdf
7 IRF630 N-Channel Enhancement Mode Power MOS Transistors Comset Semiconductors
Comset Semiconductors
IRF630 pdf
8 IRF630 Trans MOSFET N-CH 200V 9A 3-Pin(3+Tab) TO-220 Tube New Jersey Semiconductor
New Jersey Semiconductor
IRF630 pdf
9 IRF630 Power MOSFET Vishay
Vishay
IRF630 pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components