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Vishay Intertechnology Electronic Components Datasheet

IRF640L Datasheet

Power MOSFET

No Preview Available !

IRF640L pdf
www.vishay.com
IRF640S, IRF640L, SiHF640S, SiHF640L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
200
VGS = 10 V
70
13
39
Single
0.18
I2PAK (TO-262)
D2PAK (TO-26
D
G
DS
G
D
S
G
S
N-Channel MOSFET
FEATURES
• Surface mount
• Low-profile through-hole
• Available in tape and reel
Available
• Dynamic dV/dt rating
• 150 °C operating temperature
Available
• Fast switching
• Fully avalanche rated
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combinations of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D2PAK is a surface mount power package capable of
accommodating die size up to HEX-4. It provides the
highest power capability and the last lowest possible
on-resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application. The
through-hole version (IRF640L/SiHF640L) is available for
low-profile applications.
ORDERING INFORMATION
Package
D2PAK (TO-263)
Lead (Pb)-free and Halogen-free
SiHF640S-GE3
Lead (Pb)-free
IRF640SPbF
SiHF640S-E3
Note
a. See device orientation.
D2PAK (TO-263)
SiHF640STRL-GE3 a
IRF640STRLPbF a
SiHF6340STL-E3 a
D2PAK (TO-263)
SiHF640STRR-GE3 a
IRF640STRRPbF a
SiHF640STR-E3 a
I2PAK (TO-262)
SiHF640L-GE3
IRF640LPbF
SiHF640L-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current a, e
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energy b, e
Avalanche Current a
Repetitive Avalanche Energy a
Maximum Power Dissipation
Peak Diode Recovery dV/dt c, e
TC = 25 °C
TA = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature) d
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 2.7 mH, Rg = 25 , IAS = 18 A (see fig. 12).
c. ISD 18 A, dI/dt 150 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. Uses IRF640/SiHF640 data and test conditions.
LIMIT
200
± 20
18
11
72
1.0
580
18
13
3.1
130
5.0
-55 to +150
300
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
S15-2667-Rev. D, 16-Nov-15
1
Document Number: 91037
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

IRF640L Datasheet

Power MOSFET

No Preview Available !

IRF640L pdf
www.vishay.com
IRF640S, IRF640L, SiHF640S, SiHF640L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
(PCB mounted, steady-state) a
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
TYP.
-
-
MAX.
40
1.0
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA c
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 200 V, VGS = 0 V
VDS = 160 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 11 A b
VDS = 50 V, ID = 11 A d
200 -
-V
- 0.29 - V/°C
2.0 - 4.0 V
- - ± 100 nA
- - 25
μA
- - 250
- - 0.18
6.7 -
-S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Input Resistance
Drain-Source Body Diode Characteristics
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Rg
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5 d
VGS = 10 V
ID = 18 A, VDS = 160 V,
see fig. 6 and 13 b, c
VDD = 100 V, ID = 18 A,
Rg = 9.1 , RD = 5.4 , see fig. 10 b, c
f = 1 MHz, open drain
- 1300 -
- 430 -
- 130 -
- - 70
- - 13
- - 39
- 14 -
- 51 -
- 45 -
- 36 -
0.5 - 3.6
pF
nC
ns
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
Pulsed Diode Forward Current a
ISM p - n junction diode
D
G
S
- - 18
A
- - 72
Body Diode Voltage
VSD
TJ = 25 °C, IS = 18 A, VGS = 0 V b
- - 2.0 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
Qrr
TJ = 25 °C, IF = 18 A, dI/dt = 100 A/μs b, c
-
-
300 610 ns
3.4 7.1 μC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. Uses IRF640/SiHF640 data and test conditions.
S15-2667-Rev. D, 16-Nov-15
2
Document Number: 91037
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number IRF640L
Description Power MOSFET
Maker Vishay
Total Page 8 Pages
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