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Vishay Intertechnology Electronic Components Datasheet

IRF9Z24S Datasheet

Power MOSFET

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IRF9Z24S pdf
IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
- 60
VGS = - 10 V
19
Qgs (nC)
5.4
Qgd (nC)
11
Configuration
Single
0.28
S
I2PAK (TO-262)
D2PAK (TO-263)
G
G
SD
D
G
S
D
P-Channel MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• Advanced Process Technology
• Surface Mount (IRF9Z24S, SiHF9Z24S)
• Low-Profile Through-Hole (IRF9Z24L, SiHF9Z24L)
• 175 °C Operating Temperature
• Fast Switching
• P-Channel
• Fully Avalanche Rated
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The D2PAK is a surface mount power package capable of
accommodating die size up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application.
The through-hole version (IR9Z24L, SiH9Z24L) is available
for low-profile applications.
ORDERING INFORMATION
Package
D2PAK (TO-263)
Lead (Pb)-free and Halogen-free SiHF9Z24S-GE3
Lead (Pb)-free
Note
a. See device orientation.
IRF9Z24SPbF
SiHF9Z24S-E3
D2PAK (TO-263)
SiHF9Z24STRL-GE3a
IRF9Z24STRLPbFa
SiHF9Z24STL-E3a
D2PAK (TO-263)
SiHF9Z24STRR-GE3a
IRF9Z24STRRPbFa
SiHF9Z24STR-E3a
I2PAK (TO-262)
-
IRF9Z24LPbF
SiHF9Z24L-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain Currente
Pulsed Drain Currenta, e
VGS at - 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Linear Derating Factor
Single Pulse Avalanche Energyb, e
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
EAS
IAR
EAR
Maximum Power Dissipation
Peak Diode Recovery dV/dtc, e
Operating Junction and Storage Temperature Range
TA = 25 °C
TC = 25 °C
PD
dV/dt
TJ, Tstg
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 25 V, starting TJ = 25 °C, L = 2.3 mH, Rg = 25 , IAS = - 11 A (see fig. 12).
c. ISD - 11 A, dI/dt 140 A/μs, VDD VDS, TJ 175 °C.
d. 1.6 mm from case.
e. Uses IRF9Z24, SiHF9Z24 data and test conditions.
LIMIT
- 60
± 20
- 11
- 7.7
- 44
0.40
240
- 11
6.0
3.7
60
- 4.5
- 55 to + 175
300d
UNIT
V
A
W/°C
mJ
A
mJ
W
W
V/ns
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91091
S11-1063-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

IRF9Z24S Datasheet

Power MOSFET

No Preview Available !

IRF9Z24S pdf
IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
(PCB Mount)a
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
MIN.
-
-
TYP.
-
-
MAX.
40
2.5
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0, ID = - 250 μA
Reference to 25 °C, ID = - 1 mAc
VDS = VGS, ID = - 250 μA
VGS = ± 20 V
VDS = - 60 V, VGS = 0 V
VDS = - 48 V, VGS = 0 V, TJ = 150 °C
VGS = - 10 V
ID = - 6.6 Ab
VDS = - 25 V, ID = - 6.6 Ac
- 60
-
- 2.0
-
-
-
-
1.4
-
- 0.056
-
-
-
-
-
-
-
-
- 4.0
± 100
- 100
- 500
0.28
-
V
V/°C
V
nA
μA
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
VDS = - 25 V,
f = 1.0 MHz, see fig. 5c
VGS = - 10 V
ID = - 11 A, VDS = - 48 V,
see fig. 6 and 13b, c
VDD = - 30 V, ID = - 11 A,
Rg = 18 , RD = 2.5 , see fig. 10b
-
-
-
-
-
-
-
-
-
-
570 -
360 - pF
65 -
- 19
- 5.4 nC
- 11
13 -
68 -
ns
15 -
29 -
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
Pulsed Diode Forward Currenta
ISM p - n junction diode
D
G
S
- - - 11
A
- - - 44
Body Diode Voltage
Drain-Source Body Diode Characteristics
VSD
TJ = 25 °C, IS = - 11 A, VGS = 0 Vb
-
-
- 6.3
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
trr
Qrr
TJ = 25 °C, IF = -11 A, dI/dt = 100 A/μsb, c
-
-
100 200 ns
320 640 nC
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. Uses IRF9Z24, SiHF9Z24 data and test conditions.
www.vishay.com
2
Document Number: 91091
S11-1063-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number IRF9Z24S
Description Power MOSFET
Maker Vishay
Total Page 9 Pages
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