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Vishay Intertechnology Electronic Components Datasheet

IRF9Z34S Datasheet

Power MOSFET

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IRF9Z34S pdf
IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
- 60
VGS = - 10 V
34
Qgs (nC)
9.9
Qgd (nC)
16
Configuration
Single
0.14
I2PAK (TO-262)
D2PAK (TO-263)
S
G
SD
D
G
S
G
D
P-Channel MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• Advanced Process Technology
• Surface Mount (IRF9Z34S, SiHF9Z34S)
• Low-Profile Through-Hole (IRF9Z34L, SiHF9Z34L)
• 175 °C Operating Temperature
• Fast Switching
• P-Channel
• Fully Avalanche Rated
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The D2PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application.
The through-hole version (IRF9Z34L, SiHF9Z34L) is
available for low-profile applications.
ORDERING INFORMATION
Package
D2PAK (TO-263)
Lead (Pb)-free and Halogen-free SiHF9Z34S-GE3
Lead (Pb)-free
IRF9Z34SPbF
SiHF9Z34S-E3
Note
a. See device orientation.
D2PAK (TO-263)
SiHF9Z34STRL-GE3a
IRF9Z34STRLPbFa
SiHF9Z34STL-E3a
D2PAK (TO-263)
SiHF9Z34STRR-GE3a
IRF9Z34STRRPbFa
SiHF9Z34STR-E3a
I2PAK (TO-262)
-
IRF9Z34LPbF
SiHF9Z34L-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta, e
Linear Derating Factor
Single Pulse Avalanche Energyb, e
Avalanche Currenta
Repetiitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc, e
VGS at - 10 V
TC = 25 °C
TC = 100 °C
TC = 25 °C
TA = 25 °C
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 25 V, starting TJ = 25 °C, L = 1.3 mH, Rg = 25 , IAS = - 18 A (see fig. 12).
c. ISD - 18 A, dI/dt 170 A/μs, VDD VDS, TJ 175 °C.
d. 1.6 mm from case.
e. Uses IRF9Z34, SiHF9Z34 data and test conditions.
LIMIT
- 60
± 20
- 18
- 13
- 72
0.59
370
- 18
8.8
88
3.7
- 4.5
- 55 to + 175
300d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91093
S11-1052-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

IRF9Z34S Datasheet

Power MOSFET

No Preview Available !

IRF9Z34S pdf
IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient (PCB
Mounted, steady-state)a
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
TYP.
-
-
MAX.
40
1.7
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = - 250 μA
Reference to 25 °C, ID = - 1 mAc
VDS = VGS, ID = - 250 μA
VGS = ± 20 V
VDS = - 60 V, VGS = 0 V
VDS = - 48 V, VGS = 0 V, TJ = 150 °C
VGS = - 10 V
ID = - 11 Ab
VDS = - 25 V, ID = - 11 Ac
- 60
-
- 2.0
-
-
-
-
5.9
-
- 0.06
-
-
-
-
-
-
-
-
- 4.0
± 100
- 100
- 500
0.14
-
V
V/°C
V
nA
μA
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
VDS = - 25 V,
f = 1.0 MHz, see fig. 5c
- 1100 -
- 620 -
- 100 -
pF
VGS = - 10 V
ID = - 18 A, VDS = - 48 V,
see fig. 6 and 13b, c
-
-
-
- 34
- 9.9 nC
- 16
- 18 -
VDD = - 30 V, ID = - 18 A,
Rg = 12 , RD = 1.5 , see fig. 10b, c
- 120 -
ns
- 20 -
- 58 -
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
Pulsed Diode Forward Currenta
ISM p - n junction diode
D
G
S
- - - 18
A
- - - 72
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
VSD TJ = 25 °C, IS = - 18 A, VGS = 0 Vb
-
-
- 6.3
V
trr
TJ = 25 °C, IF = - 18 A, dI/dt = 100 A/μsb, c
-
100 200 ns
Qrr - 280 520 nC
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. Uses IRF9Z34,SiHF9Z34 data and test conditions.
www.vishay.com
2
Document Number: 91093
S11-1052-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number IRF9Z34S
Description Power MOSFET
Maker Vishay
Total Page 10 Pages
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