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Vishay Intertechnology Electronic Components Datasheet

IRFBC40AS Datasheet

Power MOSFET

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IRFBC40AS pdf
IRFBC40AS, SiHFBC40AS
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
600
VGS = 10 V
42
Qgs (nC)
10
Qgd (nC)
20
Configuration
Single
D
D2PAK (TO-263)
1.2
G
GD
S
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
S
N-Channel MOSFET
D2PAK (TO-263)
SiHFBC40AS-GE3
IRFBC40ASPbF
SiHFBC40AS-E3
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• Low Gate Charge Qg results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Effective Coss Specified
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
• Single Transistor Forward
D2PAK (TO-263)
SiHFBC40ASTRL-GE3a
IRFBC40ASTRLPbFa
SiHFBC40ASTL-E3a
D2PAK (TO-263)
SiHFBC40ASTRR-GE3a
IRFBC40ASTRRPbFa
SiHFBC40ASTR-E3a
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currente
Pulsed Drain Currenta, e
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc, e
VGS at 10 V
TC = 25 °C
TC = 100 °C
TC = 25 °C
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 29.6 mH, Rg = 25 , IAS = 6.2 A (see fig. 12).
c. ISD 6.2 A, dI/dt 88 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. Uses IRFBC40A, SiHFBC40A data and test conditions.
LIMIT
600
± 30
6.2
3.9
25
1.0
570
6.2
13
125
6.0
- 55 to + 150
300d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91113
S11-1053-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

IRFBC40AS Datasheet

Power MOSFET

No Preview Available !

IRFBC40AS pdf
IRFBC40AS, SiHFBC40AS
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
RthJA
RthJC
TYP.
-
-
MAX.
40
1.0
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mAd
VDS = VGS, ID = 250 μA
VGS = ± 30 V
VDS = 600 V, VGS = 0 V
VDS = 480 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 3.7 Ab
VDS = 50 V, ID = 3.7 A
600 -
- 0.66
-V
- V/°C
2.0 - 4.0 V
- - ± 100 nA
- - 25
μA
- - 250
- - 1.2
3.4 -
-S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
Output Capacitance
Coss
Output Capacitance Effective
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Coss eff.
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 0 V
VDS = 1.0 V, f = 1.0 MHz
VDS = 480 V, f = 1.0 MHz
VDS = 0 V to 480 Vc
VGS = 10 V
ID = 6.2 A, VDS = 480 V,
see fig. 6 and 13b
VDD = 300 V, ID = 6.2 A,
Rg = 9.1 , RD = 47
see fig. 10b
-
-
-
-
-
-
-
-
-
-
-
-
-
1036
136
7.0
1487
36
48
-
-
-
13
23
31
18
-
-
-
-
-
-
42
10
20
-
-
-
-
pF
nC
ns
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
Pulsed Diode Forward Currenta
ISM p - n junction diode
D
G
S
- - 6.2
A
- - 25
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
VSD
TJ = 25 °C, IS = 6.2 A, VGS = 0 Vb
- - 1.5 V
trr
- 431 647 ns
TJ = 25 °C, IF = 6.2 A, dI/dt = 100 A/μsb
Qrr - 1.8 2.8 μC
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. COSS eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising fom 0 to 80 % VDS.
d. Uses IRHFBC40A/SiHFBC40A data and test conditions.
www.vishay.com
2
Document Number: 91113
S11-1053-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number IRFBC40AS
Description Power MOSFET
Maker Vishay
Total Page 10 Pages
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