http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




Vishay Intertechnology Electronic Components Datasheet

IRFBC40L Datasheet

Power MOSFET

No Preview Available !

IRFBC40L pdf
IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
600
VGS = 10 V
60
Qgs (nC)
8.3
Qgd (nC)
30
Configuration
Single
1.2
D
I2PAK (TO-262)
D2PAK (TO-263)
G
SD
D
G
S
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
D2PAK (TO-263)
Lead (Pb)-free and Halogen-free SiHFBC40S-GE3
Lead (Pb)-free
Note
a. See device orientation.
IRFBC40SPbF
SiHFBC40S-E3
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• Surface Mount (IRFBC40S, SiHFBC40S)
• Low-Profile Through-Hole (IRFBC40L, SiHFBC40L)
• Available in Tape and Reel (IRFBC40S, SiHFBC40S)
• Dynamic dV/dt Rating
• 150 °C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D2PAK is a surface mount power package capable of
the accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application. The
through-hole version (IRFBC40L, SiHFBC40L) is available
for low-profile applications.
D2PAK (TO-263)
SiHFBC40STRL-GE3a
IRFBC40STRLPbFa
SiHFBC40STL-E3a
I2PAK (TO-262)
SiHFBC40L-GE3
IRFBC40LPbF
SiHFBC40L-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltagee
Gate-Source Voltagee
Continuous Drain Current
Pulsed Drain Currenta,e
Linear Derating Factor
Single Pulse Avalanche Energyb, e
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc, e
VGS at 10 V
TC = 25 °C
TC = 100 °C
TC = 25 °C
TA = 25 °C
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V; starting TJ = 25 °C, L = 27 mH, Rg = 25 , IAS = 6.2 A (see fig. 12).
c. ISD 6.2 A, dI/dt 80 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. Uses IRFBC40, SiHFBC40 data and test conditions.
LIMIT
600
± 20
6.2
3.9
25
1.0
570
6.2
13
130
3.1
3.0
- 55 to + 150
300d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91116
S11-1053-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

IRFBC40L Datasheet

Power MOSFET

No Preview Available !

IRFBC40L pdf
IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
(PCB Mounted, steady-state)a
RthJA
Maximum Junction-to-Case
RthJC
Note
a. When mounted on 1" square PCB ( FR-4 or G-10 material).
TYP.
-
-
MAX.
40
1.0
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 600 V, VGS = 0 V
VDS = 480 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 3.7 Ab
VDS = 100 V, ID = 3.7 Ab
600 -
-V
- 0.70 - V/°C
2.0 - 4.0 V
- - ± 100 nA
- - 100
μA
- - 500
- - 1.2
4.7 -
-S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Drain-Source Body Diode Characteristics
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5c
- 1300 -
- 160 -
- 30 -
pF
VGS = 10 V
ID = 6.2 A, VDS = 480 V,
see fig. 6 and 13b, c
-
-
-
- 60
- 8.3 nC
- 30
VDD = 300 V, ID = 6.2 A,
Rg = 9.1 , RD = 47 ,
see fig. 10b, c
- 13 -
- 18 -
ns
- 55 -
- 20 -
Between lead, and center of die contact
-
7.5
-
nH
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM p - n junction diode
D
G
S
- - 6.2
A
- - 25
Body Diode Voltage
VSD
TJ = 25 °C, IS = 6.2 A, VGS = 0 Vb
- - 1.5 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
- 450 940 ns
TJ = 25 °C, IF = 6.2 A, dI/dt = 100 A/μsb
Qrr - 3.8 7.9 μC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. Uses IRFBC40, SiHFBC40 data and test conditions.
www.vishay.com
2
Document Number: 91116
S11-1053-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number IRFBC40L
Description Power MOSFET
Maker Vishay
Total Page 10 Pages
PDF Download
IRFBC40L pdf
Download PDF File
IRFBC40L pdf
View for Mobile



Buy Electronic Components




Related Datasheet

1 IRFBC40 N - CHANNEL 600V - 1.0ohm - 6.2 A - TO-220 PowerMESH] MOSFET STMicroelectronics
STMicroelectronics
IRFBC40 pdf
2 IRFBC40 6.2A/ 600V/ 1.200 Ohm/ N-Channel Power MOSFET Intersil Corporation
Intersil Corporation
IRFBC40 pdf
3 IRFBC40 6.2A and 5.4A/ 600V/ 1.2 and 1.6 Ohm/ N-Channel Power MOSFETs Harris Corporation
Harris Corporation
IRFBC40 pdf
4 IRFBC40 Power MOSFET(Vdss=600V/ Rds(on)max=1.2ohm/ Id=6.2A) International Rectifier
International Rectifier
IRFBC40 pdf
5 IRFBC40 N-Channel Power MOSFET Fairchild Semiconductor
Fairchild Semiconductor
IRFBC40 pdf
6 IRFBC40 Power MOSFET Vishay
Vishay
IRFBC40 pdf
7 IRFBC40 N-Channel Power MOSFETs Harris
Harris
IRFBC40 pdf
8 IRFBC40A Power MOSFET(Vdss=600V/ Rds(on)max=1.2ohm/ Id=6.2A) International Rectifier
International Rectifier
IRFBC40A pdf
9 IRFBC40APBF HEXFET Power MOSFET International Rectifier
International Rectifier
IRFBC40APBF pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components