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Vishay Intertechnology Electronic Components Datasheet

IRFI9620G Datasheet

Power MOSFET

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IRFI9620G pdf
IRFI9620G, SiHFI9620G
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
- 200
VGS = - 10 V
15
3.2
8.4
Single
1.5
TO-220 FULLPAK
S
G
GDS
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Isolated Package
• High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available
f = 60 Hz)
RoHS*
• Sink to Lead Creepage Dist. = 4.8 mm
COMPLIANT
• P-Channel
• Dynamic dV/dt
• Low Thermal Resistance
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional
insulating hardware in commercial-industrial applications.
The molding compound used provides a high isolation
capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
FULLPAK is mounted to a heatsink using a single clip or by
a single screw fixing.
TO-220 FULLPAK
IRFI9620GPbF
SiHFI9620G-E3
IRFI9620G
SiHFI9620G
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at - 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 50 V, starting TJ = 25 °C, L = 13 mH, RG = 25 Ω, IAS = - 3.0 A (see fig. 12).
c. ISD - 3.9 A, dI/dt 95 A/µs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
LIMIT
- 200
± 20
- 3.0
- 1.9
- 12
0.24
80
- 3.0
3.0
30
- 5.0
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
Document Number: 91166
S-Pending-Rev. A, 23-Jun-08
WORK-IN-PROGRESS
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

IRFI9620G Datasheet

Power MOSFET

No Preview Available !

IRFI9620G pdf
IRFI9620G, SiHFI9620G
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
RthJA
RthJC
TYP.
-
-
MAX.
65
4.1
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = - 250 µA
Reference to 25 °C, ID = - 1 mA
VDS = VGS, ID = - 250 µA
VGS = ± 20 V
VDS = - 200 V, VGS = 0 V
VDS = - 160 V, VGS = 0 V, TJ = 125 °C
VGS = - 10 V
ID = - 1.8 Ab
VDS = - 50 V, ID = - 1.8 Ab
- 200
-
- 2.0
-
-
-
-
1.3
-
- 0.22
-
-
-
-
-
-
-
-
- 4.0
± 100
- 100
- 500
1.5
-
V
V/°C
V
nA
µA
Ω
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
Ciss
Coss
Crss
C
VGS = 0 V,
VDS = - 15 V,
f = 1.0 MHz, see fig. 5
f = 1 MHz
- 340 -
- 110 - pF
- 33 -
- 12 -
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = - 10 V
ID = - 2.1 A, VDS = - 160 V,
see fig. 6 and 13b
VDD = - 100 V, ID = - 3.9 A,
RG = 18 Ω, RD= 24 Ω,
see fig. 10b
-
-
-
-
-
-
-
- 15
- 3.2 nC
- 8.4
8.8 -
27 -
ns
7.3 -
19 -
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
6 mm (0.25") from
D
package and center of
G
LS die contact
S
- 4.5 -
nH
- 7.5 -
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM p - n junction diode
D
G
S
- - - 3.0
A
- - - 12
Body Diode Voltage
VSD
TJ = 25 °C, IS = - 3.0 A, VGS = 0 Vb
-
-
- 6.3
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
TJ = 25 °C, IF = - 3.9 A, dI/dt = 100 A/µsb
-
150 300 ns
Qrr
-
0.97 2.0
µC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 µs; duty cycle 2 %.
www.vishay.com
2
Document Number: 91166
S-Pending-Rev. A, 23-Jun-08


Part Number IRFI9620G
Description Power MOSFET
Maker Vishay
Total Page 8 Pages
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