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Vishay Intertechnology Electronic Components Datasheet

IRFL9110 Datasheet

Power MOSFET

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IRFL9110 pdf
www.vishay.com
IRFL9110, SiHFL9110
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
-100
VGS = -10 V
8.7
2.2
4.1
Single
1.2
S
SOT-223
D
S
D
G
Marking code: FF
G
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
SOT-223
SiHFL9110-GE3
IRFL9110PbF
SiHFL9110-E3
FEATURES
• Surface mount
• Available in tape and reel
• Dynamic dV/dt rating
• Repetitive avalanche rated
• P-channel
• Fast switching
• Ease of paralleling
Available
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The SOT-223 package is designed for surface-mount using
vapor phase, infrared, or wave soldering techniques. Its
unique package design allows for easy automatic
pick-and-place as with other SOT or SOIC packages but
has the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation of
greater than 1.25 W is possible in a typical surface mount
application.
SOT-223
SiHFL9110TR-GE3 a
IRFL9110TRPbF a
SiHFL9110T-E3 a
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current a
Linear Derating Factor
Linear Derating Factor (PCB Mount) e
Single Pulse Avalanche Energy b
Avalanche Current a
Repetitive Avalanche Energy a
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount) e
Peak Diode Recovery dV/dt c
VGS at - 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
TC = 25 °C
TA = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = -25 V, starting TJ = 25 °C, L = 7.7 mH, Rg = 25 , IAS = -4.4 A (see fig. 12).
c. ISD -4.4 A, dI/dt -75 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
LIMIT
-100
± 20
-1.1
-0.69
-8.8
0.025
0.017
100
-1.1
0.31
3.1
2.0
-5.5
-55 to +150
300
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
S14-1686-Rev. F, 18-Aug-14
1
Document Number: 91196
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

IRFL9110 Datasheet

Power MOSFET

No Preview Available !

IRFL9110 pdf
www.vishay.com
IRFL9110, SiHFL9110
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
(PCB Mount) a
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
MIN.
-
-
TYP.
-
-
MAX.
60
40
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = -250 μA
Reference to 25 °C, ID = -1 mA
VDS = VGS, ID = -250 μA
VGS = ± 20 V
VDS = -100 V, VGS = 0 V
VDS = -80 V, VGS = 0 V, TJ = 125 °C
VGS = -10 V
ID = -0.66 A b
VDS = -50 V, ID = -0.66 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
VDS = - 25 V,
f = 1.0 MHz, see fig. 5
VGS = -10 V
ID = -4.0 A, VDS = -80 V,
see fig. 6 and 13 b
VDD = -50 V, ID = -4.0 A,
RG = 24 , RD = 11 , see fig. 10 b
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
LD
LS
Between lead,
6 mm (0.25") from
package and center of
die contact
D
G
S
MIN. TYP. MAX. UNIT
-100
-
-2.0
-
-
-
-
0.82
-
-0.091
-
-
-
-
-
-
-
-
-4.0
± 100
-100
- 500
1.2
-
V
V/°C
V
nA
μA
S
- 200 -
- 94 - pF
- 18 -
- - 8.7
- - 2.2 nC
- - 4.1
- 10 -
- 27 -
ns
- 15 -
- 17 -
- 4.0 -
nH
- 6.0 -
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Current a
integral reverse
ISM p - n junction diode
D
G
S
- - -1.1
A
- - -8.8
Body Diode Voltage
VSD
TJ = 25 °C, IS = -1.1 A, VGS = 0 V b
- - -5.5 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
Qrr
TJ = 25 °C, IF = -4.0 A, dI/dt = 100 A/μs b
-
-
80 160
0.15 0.30
ns
μC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
S14-1686-Rev. F, 18-Aug-14
2
Document Number: 91196
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number IRFL9110
Description Power MOSFET
Maker Vishay
Total Page 9 Pages
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