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Vishay Intertechnology Electronic Components Datasheet

IRFR9010 Datasheet

Power MOSFET

No Preview Available !

IRFR9010 pdf
IRFR9010, IRFU9010, SiHFR9010, SiHFU9010
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
- 50
VGS = - 10 V
9.1
3.0
5.9
Single
0.50
S
DPAK
(TO-252)
D
IPAK
(TO-251)
D
G
GS
GD S
D
P-Channel MOSFET
FEATURES
• Surface Mountable (Order as IRFR9010,
SiHFR9010)
• Straight Lead Option (Order as IRFU9010,
SiHFU9010)
• Repetitive Avalanche Ratings
• Dynamic dV/dt Rating
• Simple Drive Requirements
• Ease of Paralleling
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The power MOSFET technology is the key to Vishay’s
advanced line of power MOSFET transistors. The efficient
geometry and unique processing of this latest “State of the
Art” design achieves: very low on-state resistance
combined with high transconductance; superior reverse
energy and diode recovery dV/dt capability.
The power MOSFET transistors also feature all of the well
established advantages of MOSFETs such as voltage
control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
Surface mount packages enhance circuit performance by
reducing stray inductances and capacitance. The DPAK
(TO-252) surface mount package brings the advantages of
power MOSFETs to high volume applications where PC
Board surface mounting is desirable. The surface mount
option IRFR9010, SiHFR9010 is provided on 16 mm tape.
The straight lead option IRFU9010, SiHFU9010 of the device
is called the IPAK (TO-251).
They are well suited for applications where limited heat
dissipation is required such as, computers and peripherals,
telecommunication equipment, DC/DC converters, and a
wide range of consumer products.
ORDERING INFORMATION
Package
DPAK (TO-252)
Lead (Pb)-free and Halogen-free
SiHFR9010-GE3
Lead (Pb)-free
IRFR9010PbF
SiHFR9010-E3
Note
a. See device orientation.
DPAK (TO-252)
SiHFR9010TR-GE3a
IRFR9010TRPbFa
SiHFR9010T-E3a
DPAK (TO-252)
SiHFR9010TRL-GE3a
IRFR9010TRLPbFa
SiHFR9010TL-E3a
IPAK (TO-251)
SiHFU9010-GE3
IRFU9010PbF
SiHFU9010-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
VGS at - 10 V
TC = 25 °C
TC = 100 °C
TC = 25 °C
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).
b. VDD = - 25 V, starting TJ = 25 °C, L = 9.7 mH, Rg = 25 , peak IL = - 5.3 A.
c. ISD - 5.3 A, dI/dt - 80 A/μs, VDD 40 V, TJ 150 °C, suggested Rg = 24 .
d. 0.063" (1.6 mm) from case.
LIMIT
- 50
± 20
- 5.3
- 3.3
- 21
0.20
136
- 5.3
2.5
25
5.8
- 55 to + 150
300
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
S13-0167-Rev. D, 04-Feb-13
1
Document Number: 91378
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

IRFR9010 Datasheet

Power MOSFET

No Preview Available !

IRFR9010 pdf
IRFR9010, IRFU9010, SiHFR9010, SiHFU9010
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
RthJA
Case-to-Sink
RthCS
Maximum Junction-to-Case (Drain)a
RthJC
Note
a. Mounting pad must cover heatsink surface area.
MIN.
-
-
-
TYP.
-
1.7
-
MAX.
110
-
5.0
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = - 250 μA
VDS = VGS, ID = - 250 μA
VGS = ± 20 V
VDS = max. rating, VGS = 0 V
VDS = 0.8 x max. rating, VGS = 0 V, TJ = 125 °C
VGS = - 10 V
ID = - 2.8 Ab
VDS - 50 V, IDS = - 2.8 A
- 50
- 2.0
-
-
-
-
1.1
-
-
-
-
-
0.35
1.7
-
- 4.0
± 500
- 250
- 1000
0.5
-
V
V
nA
μA
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Internal Source Inductance
Drain-Source Body Diode Characteristics
LS
VGS = 0 V,
VDS = - 25 V,
f = 1.0 MHz, see fig. 9
VGS = - 10 V
ID = - 4.7 A, VDS = 0.8 x max.
rating, see fig. 16
(Independent operating
temperature)
VDD = - 25 V, ID = - 4.7 A,
Rg = 24 , RD = 5.6 , see fig. 15
(Independent operating temperature)
Between lead,
6 mm (0.25") from
package and center of
die contact.
D
G
S
-
-
-
-
-
-
-
-
-
-
-
-
240 -
160 - pF
30 -
6.1 9.1
2.0 3.0 nC
3.9 5.9
6.1 9.2
47 71
ns
13 20
35 59
4.5 -
nH
7.5 -
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM p - n junction diode
D
G
S
- - - 5.3
A
- - - 18
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
VSD
TJ = 25 °C, IS = - 5.3 A, VGS = 0 Vb
-
-
- 5.5
V
trr
TJ = 25 °C, IF = - 4,7 A, dI/dt = 100 A/μsb
33
75 160 ns
Qrr 0.090 0.22 0.52 μC
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).
b. Pulse width 300 μs; duty cycle 2 %.
S13-0167-Rev. D, 04-Feb-13
2
Document Number: 91378
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number IRFR9010
Description Power MOSFET
Maker Vishay
Total Page 10 Pages
PDF Download
IRFR9010 pdf
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