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Vishay Intertechnology Electronic Components Datasheet

J308 Datasheet

N-Channel JFETs

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J308 pdf
J/SST/U308 Series
Vishay Siliconix
N-Channel JFETs
PRODUCT SUMMARY
Part Number
J308
J309
J310
SST308
SST309
SST310
U309
U310
VGS(off) (V)
1 to 6.5
1 to 4
2 to 6.5
1 to 6.5
1 to 4
2 to 6.5
1 to 4
2.5 to 6
J308
J309
J310
SST308
SST309
SST310
U309
U310
V(BR)GSS Min (V)
25
25
25
25
25
25
25
25
gfs Min (mS)
8
10
8
8
10
8
10
10
IDSS Min (mA)
12
12
24
12
12
24
12
24
FEATURES
D Excellent High Frequency Gain:
Gps 11.5 dB @ 450 MHz
D Very Low Noise: 2.7 dB @ 450 MHz
D Very Low Distortion
D High ac/dc Switch Off-Isolation
BENEFITS
D Wideband High Gain
D Very High System Sensitivity
D High Quality of Amplification
D High-Speed Switching Capability
D High Low-Level Signal Amplification
APPLICATIONS
D High-Frequency Amplifier/Mixer
D Oscillator
D Sample-and-Hold
D Very Low Capacitance Switches
DESCRIPTION
The J/SST/U308 series offers superb amplification characteristics.
Of special interest is its high-frequency performance. Even at 450
MHz, this series offers high power gain at low noise.
Low-cost J series TO-226AA (TO-92) packaging supports
automated assembly with tape-and-reel options. The SST series
TO-236 (SOT-23) package provides surface-mount capabilities
and is available with tape-and-reel options. The U series
hermetically-sealed TO-206AC (TO-52) package supports full
military processing. (See Military and Packaging Information for
further details.)
For similar dual products packaged in the TO-78, see the
U430/431 data sheet.
TO-226AA
(TO-92)
D1
S2
G3
Top View
J308
J309
J310
TO-236
(SOT-23)
D1
S2
3G
Top View
SST308 (Z8)*
SST309 (Z9)*
SST310 (Z0)*
*Marking Code for TO-236
For applications information see AN104.
Document Number: 70237
S-50149—Rev. H, 24-Jan-05
TO-206AC
(TO-52)
S
1
2
D
3
Top View
U309
U310
G and Case
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

J308 Datasheet

N-Channel JFETs

No Preview Available !

J308 pdf
J/SST/U308 Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V
Gate Current :
(J/SST Prefixes) . . . . . . . . . . . . . . . . . . . . 10 mA
(U Prefix) . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Storage Temperature :
(J/SST Prefixes) . . . . . . . . . . . . . . 55 to 150_C
(U Prefix) . . . . . . . . . . . . . . . . . . . . 65 to 175_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to 150_C
Power Dissipation :
(J/SST Prefixes)a . . . . . . . . . . . . . . . . . 350 mW
(U Prefix)b . . . . . . . . . . . . . . . . . . . . . . . 500 mW
Notes
a. Derate 2.8 mW/_C above 25_C
b. Derate 4 mW/_C above 25_C
SPECIFICATIONS FOR J/SST308, J/SST309 AND J/SST310 (TA = 25_C UNLESS NOTED)
J/SST308
Limits
J/SST309
J/SST310
Parameter
Symbol
Test Conditions
Typa Min Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Currentb
Gate Reverse Current
Gate Operating Current
Drain-Source On-Resistance
Gate-Source Forward Voltage
Dynamic
Common-Source
Forward Transconductance
Common-Source
Output Conductance
Common-Source
Input Capacitance
Common-Source
Reverse Transfer Capacitance
Equivalent Input
Noise Voltage
V(BR)GSS
VGS(off)
IDSS
IGSS
IG
rDS(on)
VGS(F)
gfs
gos
Ciss
Crss
en
IG = 1 mA , VDS = 0 V
VDS = 10 V, ID = 1 nA
VDS = 10 V, VGS = 0 V
VGS = 15 V, VDS = 0 V
TA = 125_C
VDG = 9 V, ID = 10 mA
VGS = 0 V, ID = 1 mA
IGVD=S1=0
mA
0V
J
35 25 25 25
V
1 6.5 1 4 2 6.5 V
12 60 12 30 24 60 mA
0.002
1
1
1 nA
0.001
1
1
1 mA
15 pA
35 W
0.7 1 1 1 V
VDS = 10 V, ID = 10 mA
f = 1 kHz
J
VDS = 10 V
VGS = 10 V
f = 1 MHz
SST
J
SST
VDS = 10 V, ID = 10 mA
f = 100 Hz
14
110
4
4
1.9
1.9
6
8 10 8 mS
250 250 250 mS
555
pF
2.5 2.5 2.5
nV
Hz
High Frequency
Common-Gate
Forward Transconductance
Common-Gate
Output Conductance
Common-Gate Power Gainc
Noise Figure
f = 105 MHz
14
gfg
f = 450 MHz
13
f = 105 MHz
0.16
gog
VDS = 10 V
f = 450 MHz
0.55
ID = 10 mA
f = 105 MHz
16
Gpg
f = 450 MHz
11.5
f = 105 MHz
1.5
NF
f = 450 MHz
2.7
mS
dB
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms duty cycle v3%.
c. Gain (Gpg) measured at optimum input noise match.
NZB
www.vishay.com
2
Document Number: 70237
S-50149—Rev. H, 24-Jan-05


Part Number J308
Description N-Channel JFETs
Maker Vishay
Total Page 8 Pages
PDF Download
J308 pdf
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