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Vishay Intertechnology Electronic Components Datasheet

MBRF10100CT Datasheet

Dual High Voltage Trench MOS Barrier Schottky Rectifier

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MBRF10100CT pdf
www.vishay.com
MBRF1090CT, MBRF10100CT
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
TMBS®
ITO-220AB
PIN 1
PIN 3
123
PIN 2
FEATURES
• Trench MOS Schottky technology
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters or polarity
protection application.
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
TJ max.
Package
2 x 5.0 A
90 V, 100 V
120 A
0.75 V
150 °C
ITO-220AB
Diode variations
Common cathode
MECHANICAL DATA
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs max.
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Max. repetitive peak reverse voltage
Working peak reverse voltage
Max. DC blocking voltage
Max. average forward rectified current at TC = 105 °C
total device
per diode
VRRM
VRWM
VDC
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
Non-repetitive avalanche energy
at TJ = 25 °C, L = 60 mH per diode
Peak repetitive reverse current at tp = 2 μs, 1 kHz,
TJ = 38 °C ± 2 °C per diode
Voltage rate of change (rated VR)
Operating junction and storage temperature range
Isolation voltage from terminal to heatsink with t = 1 min
EAS
IRRM
dV/dt
TJ, TSTG
VAC
MBRF1090CT MBRF10100CT
90 100
90 100
90 100
10
5.0
120
60
0.5
10 000
- 65 to + 150
1500
UNIT
V
V
V
A
A
mJ
A
V/μs
°C
V
Revision: 16-Aug-13
1 Document Number: 89126
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

MBRF10100CT Datasheet

Dual High Voltage Trench MOS Barrier Schottky Rectifier

No Preview Available !

MBRF10100CT pdf
www.vishay.com
MBRF1090CT, MBRF10100CT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL MBRF1090CT MBRF10100CT
Maximum instantaneous forward voltage
per diode (1)
Maximum reverse current per diode at
working peak reverse voltage (2)
IF = 5.0 A
IF = 5.0 A
TC = 125 °C
TC = 25 °C
TJ = 25 °C
TJ = 100 °C
VF
IR
0.75
0.85
100
6.0
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
UNIT
V
μA
mA
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBRF1090CT
Typical thermal resistance per diode
RJC
MBRF10100CT
6.8
UNIT
°C/W
ORDERING INFORMATION (EXAMPLE)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
ITO-220AB
MBRF10100CT-M3/4W
1.75
PACKAGE CODE BASE QUANTITY DELIVERY MODE
4W
50/tube
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
12
Resistive or Inductive Load
10
8
6
4
2
Mounted on Specific Heatsink
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
120
TJ = TJ Max.
100 8.3 ms Single Half Sine-Wave
80
60
40
20
0
1 10 100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Revision: 16-Aug-13
2 Document Number: 89126
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number MBRF10100CT
Description Dual High Voltage Trench MOS Barrier Schottky Rectifier
Maker Vishay
Total Page 5 Pages
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MBRF10100CT pdf
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