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Vishay Intertechnology Electronic Components Datasheet

SD1053C28S30L Datasheet

Fast Recovery Diodes

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SD1053C28S30L pdf
SD1053C..L Series
Vishay High Power Products
Fast Recovery Diodes
(Hockey PUK Version), 920/1050 A
DO-200AB (B-PUK)
PRODUCT SUMMARY
IF(AV)
920/1050 A
FEATURES
• High power FAST recovery diode series
• 2.0 to 3.0 µs recovery time
• High voltage ratings up to 3000 V
• High current capability
RoHS
COMPLIANT
• Optimized turn-on and turn-off characteristics
• Low forward recovery
• Fast and soft reverse recovery
• Press PUK encapsulation
• Case style conform to JEDEC DO-200AB (B-PUK)
• Maximum junction temperature 150 °C
• RoHS compliant
• Lead (Pb)-free
• Designed and qualified for industrial level
TYPICAL APPLICATIONS
• Snubber diode for GTO
• High voltage freewheeling diode
• Fast recovery rectifier applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
SD1053C..L
S20 S30
IF(AV)
Ths
1050
55
920
55
IF(RMS)
IFSM
50 Hz
60 Hz
1940
15 000
15 700
1700
13 000
13 610
VRRM
trr
TJ
Range
TJ
1800 to 2500
1800 to 3000
2.0 3.0
25
- 40 to 150
UNITS
A
°C
A
V
µs
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
SD1053C..S20L
SD1053C..S30L
18
22
25
18
22
25
28
30
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
1800
2200
2500
1800
2200
2500
2800
3000
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
1900
2300
2600
1900
2300
2600
2900
3100
IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
50
Document Number: 93167
Revision: 14-May-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SD1053C28S30L Datasheet

Fast Recovery Diodes

No Preview Available !

SD1053C28S30L pdf
SD1053C..L Series
Vishay High Power Products Fast Recovery Diodes
(Hockey PUK Version),
920/1050 A
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current
at heatsink temperature
Maximum RMS forward current
IF(AV)
IF(RMS)
Maximum peak, one-cycle forward,
non-repetitive surge current
IFSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum forward voltage drop
I2t
VF(TO)1
VF(TO)2
rf1
rf2
VFM
TEST CONDITIONS
180° conduction, half sine wave
Double side (single side) cooled
25 °C heatsink temperature double side cooled
t = 10 ms No voltage
t = 8.3 ms reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
t = 10 ms 100 % VRRM
t = 8.3 ms reapplied
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum
(I > π x IF(AV)), TJ = TJ maximum
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum
(I > π x IF(AV)), TJ = TJ maximum
Ipk = 1500 A, TJ = TJ maximum,
tp = 10 ms sinusoidal wave
SD1053C..L
S20 S30
UNITS
1050 (450) 920 (390) A
55 (85) 55 (85) °C
1940
1700
15 000 13 000
15 700 13 610
A
12 620 10 930
13 210 11 450
1125
845
1027
796
772
kA2s
598
727 546
11 250
8450
kA2s
1.34 1.51
V
1.48 1.67
0.37 0.50
mΩ
0.33 0.45
1.90 2.26 V
RECOVERY CHARACTERISTICS
CODE
MAXIMUM VALUE
AT TJ = 25 °C
trr AT 25 % IRRM
(µs)
TEST CONDITIONS
Ipk
SQUARE
PULSE
(A)
dI/dt
(A/µs)
Vr
(V)
S20 2.0
S30 3.0
1000
100 - 50
TYPICAL VALUES
AT TJ = 150 °C
trr AT 25 % IRRM
(µs)
Qrr
(µC)
Irr
(A)
4.0 400 180
4.5 550 230
IFM
trr
dir t
dt Qrr
IRM(REC)
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction operating
and storage temperature range
TJ, TStg
Maximum thermal resistance,
case junction to heatsink
RthJ-hs
DC operation single side cooled
DC operation double side cooled
Mounting force, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
VALUES
UNITS
- 40 to 150
°C
0.073
0.031
K/W
14 700
(1500)
N
(kg)
255 g
DO-200AB (B-PUK)
www.vishay.com
2
For technical questions, contact: ind-modules@vishay.com
Document Number: 93167
Revision: 14-May-08


Part Number SD1053C28S30L
Description Fast Recovery Diodes
Maker Vishay
Total Page 12 Pages
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