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Vishay Intertechnology Electronic Components Datasheet

Si3456BDV Datasheet

N-Channel 30-V (D-S) MOSFET

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Si3456BDV pdf
N-Channel 30-V (D-S) MOSFET
Si3456BDV
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
30 0.035 at VGS = 10 V
0.052 at VGS = 4.5 V
ID (A)
6.0
4.9
FEATURES
Halogen free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
3 mm
TSOP-6
Top View
16
25
34
2.85 mm
Ordering Information: Si3456BDV-T1-E3 (Lead (Pb)-free)
Si3456BDV-T1-GE3 (Lead (Pb)-free and Halogen-free)
Marking Code:
6Bxxx
(1, 2, 5, 6) D
(3) G
(4) S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
6.0 4.5
4.8 3.6
Pulsed Drain Current
IDM ± 30
Continuous Source Current (Diode Conduction)a
IS 1.7 0.9
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
2.0
1.3
1.1
0.7
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t5s
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
55
92
28
Maximum
62.5
110
40
Unit
°C/W
Document Number: 72544
S09-0530-Rev. D, 06-Apr-09
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1


Vishay Intertechnology Electronic Components Datasheet

Si3456BDV Datasheet

N-Channel 30-V (D-S) MOSFET

No Preview Available !

Si3456BDV pdf
Si3456BDV
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currenta
ID(on)
VDS 5 V, VGS = 10 V
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 6 A
VGS = 4.5 V, ID = 4.9 A
Forward Transconductancea
gfs
VDS = 15 V, ID = 6 A
Diode Forward Voltagea
VSD IS = 1.7 A, VGS = 0 V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs VDS = 15 V, VGS = 10 V, ID = 6 A
Gate-Drain Charge
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 15 V, RL = 15 Ω
ID 1 A, VGEN = 10 V, Rg = 6 Ω
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
IF = 1.7 A, dI/dt = 100 A/µs
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
1.0
30
Typ. Max.
3.0
± 100
1
5
0.028
0.041
12
0.8
0.035
0.052
1.2
Unit
V
nA
µA
A
Ω
S
V
8.6 13
1.8 nC
1.5
1.4 2.8 4.8
Ω
10 15
15 25
25 40 ns
10 15
20 40
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
VGS = 10 V thru 6 V
35
5V
30
25
20
4V
15
10
5 3V
0
012345
VDS - Drain-to-Source Voltage (V)
Output Characteristics
40
35
30
25
20
15
10
5
0
0
TC = - 55 °C
25 °C
125 °C
12345
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
6
www.vishay.com
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Document Number: 72544
S09-0530-Rev. D, 06-Apr-09


Part Number Si3456BDV
Description N-Channel 30-V (D-S) MOSFET
Maker Vishay
Total Page 10 Pages
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