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Vishay Intertechnology Electronic Components Datasheet

Si4480DY Datasheet

N-Channel 80-V (D-S) MOSFET

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Si4480DY pdf
N-Channel 80-V (D-S) MOSFET
Si4480DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
80 0.035 at VGS = 10 V
0.040 at VGS = 6.0 V
ID (A)
6.0
5.5
FEATURES
Halogen-free According to IEC 61249-2-21
Definiton
• Compliant to RoHS Directive 2002/95/EC
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
Top View
Ordering Information: Si4480DY-T1-E3 (Lead (Pb)-free)
Si4480DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
Pulsed Drain Current
IDM
Continuous Source Current (Diode Conduction)a
IS
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
80
± 20
6.0
4.8
40
2.1
2.5
1.6
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Notes:
a. Surface Mounted on FR4 board, t 10 s.
Symbol
RthJA
Limit
50
Unit
°C/W
Document Number: 70645
S09-0705-Rev. E, 27-Apr-09
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

Si4480DY Datasheet

N-Channel 80-V (D-S) MOSFET

No Preview Available !

Si4480DY pdf
Si4480DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
VDS = 80 V, VGS = 0 V
VDS = 80 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currenta
ID(on)
VDS = 5 V, VGS = 10 V
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 6.0 A
VGS = 6.0 V, ID = 5.5 A
Forward Transconductancea
gfs
VDS = 15 V, ID = 6.0 A
Diode Forward Voltagea
VSD IS = 2.1 A, VGS = 0 V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs VDS = 40 V, VGS = 10 V, ID = 6.0 A
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 40 V, RL = 30 Ω
ID 1 A, VGEN = 10 V, Rg = 6 Ω
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
IF = 2.1 A, dI/dt = 100 A/µs
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. For design aid only; not subject to production testing.
Min.
2
20
Typ.b
Max.
± 100
1
20
0.026
0.030
25
0.035
0.040
1.2
Unit
V
nA
µA
A
Ω
S
V
30 50
9
5.6
1.5 4.0
12.5 25
12.5 25
52 80
22 40
50 80
nC
Ω
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 70645
S09-0705-Rev. E, 27-Apr-09


Part Number Si4480DY
Description N-Channel 80-V (D-S) MOSFET
Maker Vishay
Total Page 5 Pages
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